WMSIC Electronic Components

HXY MOSFET A7

ModelA7
PackageSOD-123F
BrandHXY MOSFET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HXY MOSFET A7
Type
HXY MOSFET
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HXY MOSFET
Electronic Component
A7
Electronic Component
1
Package
SOD-123F
Electronic Component
General Purpose Diode
Electronic Component
0.04g
Electronic Component
1
Electronic Component
BM0227249379
Current
1A
Diode
Electronic Component
Current(Ir)
5uA@1kV
(Vf)
1.1V@1A
Electronic Component
65℃~+150℃
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

A7 产品概述

一、概述

HXY MOSFET(华轩阳电子)A7型通用二极管为独立式高压整流器,封装采用SOD-123F,适用于高压直流电源和开关电源的整流与保护场合。器件在1A工作电流下正向压降约为1.1V,直流反向耐压高达1000V,兼顾高压耐受力与中等电流传输能力。

二、主要参数

  • 二极管配置:独立式(离散封装)
  • 正向压降:Vf = 1.1V @ IF = 1A
  • 直流反向耐压:Vr = 1000V
  • 整流电流:IF = 1A(连续)
  • 反向电流:Ir = 5μA @ Vr = 1000V
  • 工作结温:Tj = -65℃ ~ +150℃
  • 品牌/产家:HXY MOSFET(华轩阳电子)
  • 封装:SOD-123F

三、产品特点

  1. 高压能力:1000V的反向耐压适合高压整流及脉冲耐压要求较高的应用场景。
  2. 低泄漏:在满耐压下反向电流仅5μA,适合对漏电敏感的高压电源和采样电路。
  3. 合理的正向压降:1.1V@1A 在硅整流器中属于常见水平,适合多数电源路径,兼顾损耗与成本。
  4. 宽工作温度:-65℃~+150℃,适用于工业及严酷环境下长期运行。
  5. 小型封装:SOD-123F 有利于空间受限的 PCB 布局和自动贴片生产。

四、典型应用

  • 开关电源(反激、正激)高压整流与二次侧保护
  • 工业高压电源、静电发生器、电源模块输入整流
  • 测试设备与示波器的保护电路
  • 电表或传感器中的高压采样与保护电路

五、热与可靠性注意事项

  • 持续1A整流时需关注功耗:Pf ≈ Vf×IF = 1.1W,封装与PCB铜箔散热设计需保证器件结温不超限。建议在高载流或高温环境下进行降额使用或增加散热面积。
  • 在高压开关场景中注意浪涌电流(IFSM)和瞬态过压,若电路可能出现较大浪涌,需参考完整数据手册确认允许的非重复浪涌电流并配合熔断或限流措施。
  • 长期工作应保持结温在推荐范围内,避免反复大幅温度循环造成热疲劳。

六、封装与焊接建议

  • SOD-123F 适合回流焊工艺,建议遵循厂商提供的回流温度曲线与焊盘尺寸,保证焊点可靠性。
  • 对于高压应用,PCB上应留出足够爬电距离与环氧填充,避免表面爬电或闪络。
  • 储存与湿度敏感度需按包装说明处理,防止焊接时出现焊接缺陷。

七、选型与替代参考

  • 若要求更低正向压降或更高效率,可考虑肖特基二极管,但其耐压通常不足1000V;若需要更快恢复特性,应查明恢复时间以替代快恢复二极管。
  • 最终选型应依据完整数据手册中的IFSM、热阻、结-焊接温度限制等详尽参数确认。

备注:本概述基于提供的基础参数编制,进一步电气性能、时序特性与机械尺寸请参阅华轩阳电子提供的正式数据手册或联系供应商获取样片与测试报告。

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