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HXY MOSFET SI2333CDS-HXY
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET SI2333CDS-HXY
- Type
- HXY MOSFET
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HXY MOSFET
- Electronic Component
- SI2333CDS-HXY
- Electronic Component
- 1
- Package
- SOT-23(TO-236)
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- Electronic Component
- Electronic Component
- 0.043g
- Electronic Component
- 1
- Electronic Component
- BM0259384616
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 2W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SI2333CDS-HXY 产品概述
一、概述
SI2333CDS-HXY 是华轩阳电子（HXY MOSFET）推出的一款小封装低压P沟道场效应管，封装为SOT-23（TO-236）。器件面向便携设备和电源管理场景，具有较低导通电阻和适中的开关性能，适合作为高侧开关、功率路径管理及反向极性保护元件使用。
二、主要电气参数
- 漏源电压 Vdss：18V
- 连续漏极电流 Id：6.5A
- 导通电阻 RDS(on)：28mΩ @ Vgs=4.5V
- 功率耗散 Pd：2W
- 阈值电压 Vgs(th)：1V @ 250µA
- 总栅极电荷 Qg：7.8nC @ Vgs=4.5V
- 输入电容 Ciss：980pF；输出电容 Coss：450pF；反向传输电容 Crss：250pF
- 工作温度范围：-55℃ ~ +150℃
三、性能特点
- 低导通电阻（28mΩ@4.5V），在低压、大电流场合可减少导通损耗。
- 栅极电荷适中（7.8nC），兼顾开关速度与驱动功耗，便于被轻量级驱动电路驱动。
- 封装紧凑（SOT-23），便于PCB密集布局与成本控制。
- 宽工作温度范围与可靠性指标，适用于工业及消费类环境。
四、典型应用
- 电池供电设备的高侧开关与电源路径管理
- 负载开断、反向电流保护与负载切换
- DC-DC转换器的同步或辅助开关（低压侧）
- USB/移动设备电源管理与电流限制电路
五、设计与使用建议
- 由于为P沟道器件，用作高侧开关时需注意栅源电压极性，保证在允许范围内驱动以避免超出Vgs最大值。
- 在大电流工作状态下，SOT-23的热阻和Pd（2W）限制需注意，建议优化铜箔散热（加大焊盘、使用热过孔）并评估实际结温。
- 开关设计时考虑Ciss/Crss对开关损耗和死区的影响，必要时加入适当栅阻和阻尼网络以抑制振铃与过冲。
- 建议在PCB上靠近器件放置旁路电容，减少寄生电感，提高开关稳定性。
六、封装与采购信息
- 封装：SOT-23（TO-236），单片供货便于样机验证与小批量装配。
- 品牌：HXY MOSFET（华轩阳电子）。
购买和量产前建议参考完整数据手册，确认焊接回流曲线、器件极限参数及可靠性试验报告，以满足最终应用的长期可靠性要求。
（以上参数与建议基于器件主要规格，请以官方数据手册为准并在实际电路中进行验证。）
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