WMSIC Electronic Components

HXY MOSFET DTC114EUA

ModelDTC114EUA
PackageSOT-323
BrandHXY MOSFET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

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Technical data

Product details

19 specifications

Core information

Product name
HXY MOSFET DTC114EUA
Type
HXY MOSFET
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HXY MOSFET
Electronic Component
DTC114EUA
Electronic Component
1
Package
SOT-323
Electronic Component
1 NPN
Electronic Component
Digital Transistor
Electronic Component
0.031g
Electronic Component
1
Electronic Component
BM0258661611
Operating Temperature
55℃~+150℃
Resistor
1
Resistor
10kΩ
Transistor Type
NPN
Frequency(f T)
250MHz
Power Dissipation(Pd)
200mW

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

DTC114EUA — 50V/50mA 数字晶体管(NPN,SOT-323)产品概述

一、概述

DTC114EUA 是华轩阳电子(HXY MOSFET)推出的一款集成基极限流电阻的 NPN 数字晶体管,采用紧凑的 SOT-323 封装,面向 MCU 接口驱动、低功耗开关和小信号负载控制场景。器件在单芯片上内置输入电阻,减少外部元件并简化 PCB 布局,适合体积受限的便携及消费电子产品。

二、主要规格参数

  • 集—射极击穿电压 Vceo:50 V
  • 集电极持续电流 Ic:50 mA(峰值/短时参数需参考详细数据手册)
  • 最大耗散功率 Pd:200 mW(封装热阻与环境有关,需按环境温度降额)
  • 直流电流增益 hFE:典型 30(测试条件:Ic=5 mA,VCE=5 V)
  • 输入开启电压 VI(on):约 3 V(测试条件:输入电流或测试说明见数据表)
  • 输入关闭电压 VI(off)(最大):500 mV(测试条件:IB≈100 μA,VCC=5 V)
  • 输出饱和电压 VO(on):约 300 mV @ Ic=10 mA(小电流下保持低饱和)
  • 输入电阻(内置):10 kΩ(器件内部固定阻值,减少外部限流电阻需求)
  • 电阻比率:1(器件内部阻值配置说明)
  • 工作温度范围:-55 ℃ ~ +150 ℃
  • 封装:SOT-323(超小型,便于高密度安装)

三、特点与优势

  • 集成限流电阻,免去外接基极电阻,电路更简洁;
  • 低 VO(on)(≈300 mV @ 10 mA),开关损耗小,适合驱动小型继电器、LED 与 TTL/CMOS 门级输入;
  • 较高的 VCEo(50 V)可用于高电压边沿切换或较高电源轨的场合;
  • 小封装适合移动设备和空间受限的应用;
  • 宽温度范围适用于工业级及严苛环境。

四、典型应用场景

  • MCU/逻辑电平到功率输出的接口(按内置电阻直接驱动小负载);
  • 指示灯/小型 LED 驱动;
  • 继电器、固态负载的小电流驱动;
  • 开漏输出、低边或高边开关(视电路拓扑);
  • 通用开关元件,用于信号整形与电平移位。

五、选型与使用注意事项

  • 虽然标称 Ic 可达 50 mA,但受限于封装耗散 Pd(200 mW)与 VO(on),建议在连续工作时将 Ic 限定在较低值以避免过热;
  • 计算示例:若需驱动 10 mA 负载,hFE≈30,所需基极电流约 0.33 mA;内置 10 kΩ 输入电阻在 3 V 输入时提供约 0.3 mA,满足驱动需求;
  • 对于开关高电压或频繁开关的场合,应关注瞬态能量与尖峰电流,必要时在集电极回路增加限流或吸收元件;
  • SOT-323 热性能有限,布局时注意加大铜箔散热并依据环境温度进行功耗降额;
  • 生产选型时核对完整数据手册中的各项测试条件(温度、测试电流与电压)以确保在目标工况下满足指标。

六、封装与热管理

SOT-323 提供小体积安装优势,但热阻较大。若连续功耗接近 Pd,需通过 PCB 铜箔、散热层或减小占空比来降低结温,确保长时间可靠性。工作温度上限 +150 ℃ 指的是器件极限,实际应用中应根据功耗和结温降额使用。

七、结论与建议

DTC114EUA 以其集成限流电阻、低饱和压降和 50 V 的耐压能力,适合用于 MCU 接口驱动、小功率负载开关以及空间受限的电子设备。推荐在典型 1–10 mA 负载场景下使用,关注热设计与输入电压匹配可获得最佳可靠性和性能。如需在更高电流或更高功耗场合应用,请参考华轩阳的完整数据手册或选用更大封装/更高 Pd 的元件。

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