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HXY MOSFET BT131-800D
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET BT131-800D
- Type
- HXY MOSFET
- Minimum package
- 1000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HXY MOSFET
- Electronic Component
- BT131-800D
- Electronic Component
- 1
- Package
- SOT-89
- Electronic Component
- Thyristor (SCR) / Module
- Electronic Component
- 0.153g
- Electronic Component
- 1
- Electronic Component
- BM0265023445
- Operating Temperature
- 40℃~+125℃
- Surge Current
- 10A
- Latching Current(Ih)
- 30mA
- Current(It)
- 1A
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
- Gate Voltage(Vgt)
- 2V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BT131-800D 产品概述
一、产品简介
BT131-800D 是一款通用双向开关器件，适用于交流控制与保护场合。器件阻断峰值电压（Vdrm）达 800V，均方根导通电流（It(RMS)）可达 1A，并具备 10A 的浪涌承受能力，适合中小功率交流负载的控制。器件采用 SOT-89 封装，体积小巧，便于紧凑电路设计与自动化贴装。
二、关键电气参数
- 断态峰值电压 Vdrm：800V
- 均方根导通电流 It：1A
- 浪涌电流（单脉冲）：10A
- 门极平均耗散功率 PG(AV)：400mW
- 门极触发电流 Igt：8mA
- 门极触发电压 Vgt：2V
- 保持电流 Ih：30mA
- 工作结温范围：-40℃ 至 +125℃
三、主要特性与优势
- 高耐压：800V 级别适用于高电压交流或脉冲环境。
- 良好浪涌能力：10A 的浪涌电流支持瞬态大电流冲击。
- 低门极触发要求：Vgt≈2V、Igt≈8mA，便于微控制器或低压驱动直接触发（但需考虑驱动电流裕量）。
- 小尺寸封装：SOT-89 体积小、热阻适中，便于密集布板并兼顾散热设计。
四、典型应用场景
- 家用与工业级灯光调光器、恒温器与加热器的相控/半波控制。
- 小功率电机速度控制、风扇与泵类负载的开关。
- 交流过压/过流保护、浪涌吸收电路中的可控开关元件。
- 需要自动化贴装与体积受限的板级设计。
五、使用建议与注意事项
- 为防止误触发与过快 dv/dt 引起的误通断，建议在高 dv/dt 场合并联 RC 抑制网络（阻容吸收）或使用专用 snubber。
- 门极驱动：门极平均耗散功率 400mW，长时间高频触发或大电流脉冲应限制门极通电时间与频率，避免过热。驱动电路需提供 ≥8mA 的安全触发电流。
- 热管理：SOT-89 封装散热能力有限，应对工作结温进行评估，必要时通过铜箔散热或底层散热面提升器件功耗承载。
- 保持电流 Ih 为 30mA，低于此电流可能导致器件意外关断，设计时应保证负载或并联电路能维持合适电流或采取再触发措施。
六、封装与可靠性
- 封装：SOT-89，适合表面贴装工艺，利于波峰/回流焊。
- 品牌与制造：HXY MOSFET（华轩阳电子）提供工业级温度范围与可靠性测试，适用于长期运行的控制场合。
- 建议在最终应用中进行温升与寿命验证，特别是频繁开关或高浪涌环境下需做加速老化测试。
以上为 BT131-800D 的产品概览与实用建议。若需封装引脚图、典型电路、详细温度-电流降额曲线或样片评估数据，可提供进一步支持。
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