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HXY MOSFET BAS40-05
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET BAS40-05
- Type
- HXY MOSFET
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HXY MOSFET
- Electronic Component
- BAS40-05
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM0231116046
- Current
- 200mA
- Diode
- 1
- Current(Ir)
- 200nA@30V
- (Vf)
- 1V@40mA
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage Rating(Vr)
- 40V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BAS40-05 产品概述
一、概述
BAS40-05 为一对共阴极（双二极管共阴）肖特基整流二极管，封装为 SOT-23，适用于空间受限的表贴电路。该器件由华轩阳电子（HXY MOSFET）提供，设计用于低压快速整流与保护场合，兼顾开关速度与低正向压降的需求。
二、主要参数
- 二极管配置：1 对共阴（双二极管共阴）
- 正向压降（Vf）：1 V @ 40 mA（标称）
- 直流反向耐压（Vr）：40 V
- 直流整流电流（Io）：200 mA
- 反向电流（Ir）：200 nA @ 30 V
- 非重复峰值浪涌电流（Ifsm）：600 mA（单次冲击）
- 封装：SOT-23
三、特性与优势
- 肖特基结构带来较低正向压降与极快的恢复特性，有利于高频整流与快速开关场合。
- 共阴极双芯片设计便于实现双向电源二选一（ORing）、电平移位、或对称保护电路的紧凑布局。
- 40 V 的反向耐压适合 12 V、24 V 等常见低压系统的保护与整流应用。
- SOT-23 小封装利于表贴自动化生产，节省 PCB 面积。
四、典型应用
- 电源输入反接保护、二路电源 ORing 与切换。
- 开关电源与同步整流前端的快速整流或钳位。
- 通信设备、便携终端的保护与低压整流。
- 高速开关信号路径的隔离与防反向回流。
五、封装与热管理
SOT-23 为小尺寸封装，热阻相对较高，长期工作时需注意热量管理。建议在 PCB 布局时：
- 将散热路径通过铜箔延伸到地平面或散热垫。
- 避免在高密度热源附近封装被热累积；在连续 200 mA 工作条件下进行适当降额。
- 对于脉冲浪涌，注意 Ifsm 600 mA 为非重复峰值，重复冲击需额外保护。
六、使用建议
- 若电路对正向压降敏感，建议在目标工作电流下测量实际 Vf（温度影响显著）。
- 反向漏电会随温度上升增加，设计时考虑最大工作温度下的 Ir 上升。
- 对于开关噪声敏感电路，配合合适的去耦电容与阻尼措施可抑制振铃与干扰。
- 选型时确认是否需更高电流或更低 Vf 的肖特基器件，或选择单管/并联方案以满足更高负载。
七、订购与替代
- 型号：BAS40-05，封装 SOT-23，品牌：华轩阳（HXY MOSFET）
- 选型时注意与其它 BAS40 系列型号在 Vf、Vr 与封装管脚的一致性，必要时与供应商确认数据手册与封装图。
以上信息基于器件主要规格提供，用于快速评估与应用设计。如需更详细的电气特性曲线、封装图或温升测试建议，请获取完整数据手册或联系供应商技术支持。
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