WMSIC Electronic Components

HXY MOSFET DTC123YCA

ModelDTC123YCA
PackageSOT-23
BrandHXY MOSFET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HXY MOSFET DTC123YCA
Type
HXY MOSFET
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HXY MOSFET
Electronic Component
DTC123YCA
Electronic Component
1
Package
SOT-23
Electronic Component
1 NPN
Electronic Component
Digital Transistor
Electronic Component
0.032g
Electronic Component
1
Electronic Component
BM0258661869
Operating Temperature
55℃~+150℃
Resistor
4.5
Resistor
2.2kΩ
Transistor Type
NPN
Frequency(f T)
250MHz
Power Dissipation(Pd)
200mW

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

DTC123YCA 产品概述

一、产品简介

DTC123YCA 是一款集成基极限流电阻的数字晶体管(NPN),由 HXY MOSFET(华轩阳电子)提供,封装为常用的 SOT-23,适合微控制器直接驱动小功率负载或作为信号缓冲器。器件兼顾开关速度与简单电路设计,适用于消费电子、家电和工业控制中低电流信号驱动场合。

二、主要参数

  • 集射极击穿电压 Vceo:50 V(最大)
  • 集电极电流 Ic:100 mA(最大)
  • 最大耗散功率 Pd:200 mW(环境/封装限制)
  • 直流电流增益 hFE:典型 33(条件:Ic=10 mA,Vce=5 V)
  • 输入电阻(内部基极电阻):约 2.2 kΩ
  • 内部电阻比率:4.5(器件内部比值,用于设计参考)
  • 输出饱和电压 VO(on):典型 300 mV(Ic=10 mA);约 0.5 V(Ic=0.5 mA 条件下典型值)
  • 输入/输出阈值与泄漏:参考典型测试条件(见使用注意)
  • 工作温度范围:-55 ℃ ~ +150 ℃
  • 封装:SOT-23(3 引脚)

三、主要特性

  • 集成基极电阻,简化外围驱动电路,适合 MCU、逻辑门直接驱动
  • 低饱和压降,开态损耗小(在小电流下 VO(on) 典型值 300 mV)
  • 50 V 的集射极耐压可适应多数中低压工况
  • 小封装、低成本,便于批量生产和高密度 PCB 布局

四、典型应用场景

  • MCU/逻辑输出到 LED、蜂鸣器、开关元件的驱动
  • 信号缓冲与电平移位(尤其需要集成限流时)
  • 小型继电器或光耦前级驱动(注意继电器线圈电流峰值与耗散)
  • 家电、通讯设备、传感器模块中的通断控制

五、引脚与封装说明

  • SOT-23 三引脚封装,常规排列便于替换常见数字晶体管器件。引脚功能包括基极(带内阻)、集电极与发射极。请参考产品数据手册的封装图和焊接建议以确保可靠焊接。

六、使用建议与注意事项

  • 输入驱动:内部基极电阻约 2.2 kΩ,驱动电流可通过 (Vin - Vbe)/2.2k 估算。举例:Vin=5V 时 Iin ≈ (5-0.7)/2.2k ≈ 2 mA;Vin=3.3V 时 Iin ≈ 1.18 mA。无需外加限流电阻即可直接与 MCU 连接,但若需更快开关或特殊电流要求,可增加外部元件优化。
  • 功率与热管理:器件 Pd=200 mW,若在较高 Vce 和 Ic 工作时容易触及耗散极限。例如在 50 V 下即便小电流也会产生较大功耗;在 5 V 系统下,当 Ic 接近 100 mA 时器件耗散可能超限。建议设计工作电流远低于最大值或采取降额使用与适当的 PCB 散热措施。
  • 开关与饱和:在典型 10 mA 负载下 VO(on) ≈ 300 mV,适合驱动 LED 或小负载;若需驱动更大电流或更低压降场合,应选用功率更高的外部晶体管或 MOSFET。
  • 环境与可靠性:器件工作温度范围宽,适合多种温度环境,但长期高温会影响寿命与参数稳定性,请在高温条件下留足裕量。

七、封装可靠性与选型建议

  • SOT-23 封装在手板和 SMT 生产中成熟可靠,适合体积受限的应用。
  • 若系统需长期大电流或更低压降,请选择更高 Pd 或更大封装的分立器件或功率 MOSFET。对于需要严格开关时序和更高 hFE 的场合,可参照数据手册中典型曲线选型。

如需器件完整数据手册、典型电路图或替代件推荐,我可以根据您的应用电压、负载电流和工作环境给出更具体的选型与电路建议。

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