WMSIC Electronic Components

HXY MOSFET LM2576S-3.3

ModelLM2576S-3.3
PackageTO-263-5L
BrandHXY MOSFET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HXY MOSFET LM2576S-3.3
Type
HXY MOSFET
Minimum package
500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HXY MOSFET
Electronic Component
LM2576S-3.3
Electronic Component
1
Package
TO-263-5L
Electronic Component
DC-DC Power Supply IC
Electronic Component
2.13g
Electronic Component
1
Features
Electronic Component
Type
Electronic Component
Synchronous
Electronic Component
Electronic Component
BM0258662239
Operating Temperature
40℃~+125℃
Operating Voltage
4.75V~40V
Switching Frequency
52kHz
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

LM2576S-3.3 产品概述

以下概述基于您提供的参数(降压型、输入电压 4.75V~40V、固定输出 3.3V、额定输出 3.5A、开关频率 52kHz、工作温度 -40℃~+125℃、非同步整流、单通道、内置开关管、TO-263-5L 封装)并参考 LM2576 系列的典型架构与特性整理。如需严格对照原厂 LM2576S-3.3(原厂规格额定输出为 3A),请告知以便修订说明。

一、产品简介

LM2576S-3.3 是一款基于经典单片降压(Buck)开关稳压器架构的电源管理芯片,适用于从宽输入电压向 3.3V 低压负载提供稳定的直流电源。芯片内置功率开关管,采用降压式拓扑、非同步整流设计,工作频率典型值为 52kHz,适合对EMI和效率有中等要求的工业、消费及通信类设备。TO-263-5L(D2PAK)封装有利于功率散热与 PCB 焊接可靠性。

二、主要特性

  • 宽输入电压范围:4.75V ~ 40V,适配多种电源场景(汽车、工业、24V 系统等)。
  • 固定输出电压:3.3V(高稳定度,适合 MCU、传感器及外设供电)。
  • 输出电流:设计目标 3.5A(请核对具体器件的长期额定输出与散热限制;原厂 LM2576S 系列常见额定为 3A)。
  • 开关频率:约 52kHz,易于搭配常见电感与滤波器,散热与 EMI 易于平衡。
  • 非同步整流:需外接肖特基二极管作为续流元件,外部器件选择影响整体效率与损耗。
  • 工作温度:-40℃ ~ +125℃,适用于宽温环境。
  • 封装:TO-263-5L,便于大电流散热处理。

三、典型应用场景

  • 工业控制板、嵌入式系统主电源
  • 汽车电子(需注意汽车级认证与瞬态抗扰度)
  • 通讯设备、电信模块
  • 电池供电系统到固定 3.3V 的降压转换
  • 消费类电子、单板计算机与外设电源

四、外围元件与参考电路要点

  • 电感:选择满足峰值电流与饱和电流大于最大输出电流的功率电感,典型值根据电流纹波与效率需求选型(μH 级)。
  • 肖特基二极管:因为为非同步整流,需选用低正向压降、快速恢复的肖特基;电流与反向耐压需满足系统要求。
  • 输出电容:低 ESR 的电解或固态电容与陶瓷并联,保证瞬态响应与稳定性。
  • 输入电容:抗输入纹波与瞬态,低 ESR 类型优先,靠近芯片输入端布局。
  • 布局:开关节点回路尽量短,功率回路走线粗宽,肖特基、二极管与电感布局对EMI及效率影响大。

五、热设计与注意事项

  • TO-263-5L 封装需配合大铜面积散热垫(底层散热通孔、散热铜箔)以保证持续高电流下稳定工作。
  • 评估实际应用下芯片结温(Tj)与功率损耗(Ps),必要时外加散热器或优化 PCB 散热设计。
  • 长短路、过温、输出瞬态保护策略需在系统层面设计(如保险丝、热关断、过流检测等)。

六、选型与替代建议

  • 若需要更高效率或更小发热,可考虑同步整流型号或更高频率的降压芯片(减少电感体积与纹波)。
  • 若严格要求 3.5A 连续输出,应核实器件的额定输出能力及实际板级散热条件;若原厂 LM2576S 标注为 3A,请考虑并联或选用额定更高的替代件。
  • 常见替代型号:TI 的其他降压控制器、或市场上的同步降压器,依据效率、封装与外围元件成本权衡选择。

如需,我可以基于您的 PCB 散热约束和负载特征给出典型参考电路(元件清单与尺寸建议)与 PCB 布局要点,或帮您核对是否为“LM2576S-3.3 原厂规格”与您所需的 3.5A 额定是否一致。

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