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HXY MOSFET ST2045
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET ST2045
- Type
- HXY MOSFET
- Minimum package
- 5000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HXY MOSFET
- Electronic Component
- ST2045
- Electronic Component
- 1
- Package
- TO-277
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.15g
- Electronic Component
- 1
- Electronic Component
- BM0228150203
- Current
- 20A
- Diode
- Electronic Component
- (Vf)
- 520mV@10A
- Electronic Component
- 65℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage Rating(Vr)
- 45V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
ST2045 肖特基二极管产品概述
一、产品简介
ST2045 是华轩阳电子（HXY MOSFET）出品的独立式肖特基整流二极管，封装为 TO-277。其典型正向压降为 0.52V（在 10A 条件下），直流反向耐压 45V，额定整流电流 20A，非重复峰值浪涌电流（Ifsm）200A，工作结温范围 -65℃ 至 +150℃。适用于需要低压降、高效率的功率整流场合。
二、主要特点
- 低正向压降（0.52V@10A），提高系统效率、减少功率损耗；
- 中等耐压（45V），适合 12V/24V 电源及逆变器前端整流；
- 高额定电流（20A）与高浪涌能力（200A），满足启动和冲击电流要求；
- 宽工作结温，适应工业级温度环境；
- TO-277 封装便于散热器安装与机械固定。
三、设计与使用建议
- 高电流场合建议配合散热片或强制风冷使用，并按厂方热阻图进行结-壳-环境热设计；
- 肖特基器件随温度上升反向漏电流显著增大，需在高温工况下进行反向漏流与结温验证；
- 若并联使用，应做好电流均流与热耦合设计，避免单只过载；
- 浪涌能力受波形与持续时间影响，关键场合请按实际浪涌测试确认。
四、典型应用
适用于开关电源整流、DC-DC 变换器自由轮回路、整流桥、高效电源管理、车载电子与电池保护等需要低损耗快速整流的场合。
注：下单或设计前建议获取完整数据手册，确认引脚、机械尺寸和热阻等详细参数。
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