WMSIC Electronic Components

HXY MOSFET AO3400-ED

ModelAO3400-ED
PackageSOT-23
BrandHXY MOSFET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HXY MOSFET AO3400-ED
Type
SOT-23
Minimum package
3000 编带

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HXY MOSFET
Electronic Component
AO3400-ED
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
Electronic Component
Electronic Component
0.038g
Electronic Component
1
Electronic Component
BM0257710963
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
900mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AO3400-ED 产品概述

一、概述

AO3400-ED 为一颗小封装、高性价比的 N 沟道场效应管(MOSFET),单只 SOT-23 封装,适用于低电压开关和功率控制场景。器件额定漏源耐压为 20V,连续漏极电流 3A,典型适配移动设备、便携式电源管理及开关负载等应用。

二、主要参数

  • 极性:N 沟道,数量:1 个
  • 漏源电压 Vdss:20V
  • 连续漏极电流 Id:3A
  • 导通电阻 RDS(on):55 mΩ @ Vgs=4.5V, Id=2.8A
  • 耗散功率 Pd:900 mW(SOT-23 封装)
  • 阈值电压 Vgs(th):1.2V(典型)
  • 总栅极电荷 Qg:5 nC @ 4.5V
  • 输入电容 Ciss:260 pF @ 10V
  • 反向传输电容 Crss:27 pF @ 10V
  • 工作温度范围:-55℃ ~ +150℃
  • 品牌:HXY MOSFET(华轩阳电子)
  • 封装:SOT-23

三、特性与优势

  • 低 RDS(on)(55 mΩ@4.5V)在 4.5V 门驱下表现良好,适合由 MCU 或门驱直接驱动的低压开关。
  • Qg 小(5 nC),切换损耗低,有利于提高开关效率和降低驱动功率消耗。以 4.5V 驱动时,单次栅极充放电能量约为 0.5·Qg·V ≈ 11.25 nJ。
  • 小型 SOT-23 封装有利于高密度 PCB 布局,适合体积受限的便携式产品。

四、热与开关考虑

  • SOT-23 的耗散功率 900 mW 表明对持续大电流和高频开关需谨慎。举例:在 3A 恒流且按标称 RDS(on) 计算,导通损耗约为 I^2·R ≈ 0.495 W,占据较大热预算,需考虑 PCB 铜箔散热和间歇工作或降低平均功耗。
  • 输入电容和 Miller 容(Ciss=260 pF、Crss=27 pF)会影响开关速度与过渡损耗,驱动器能力不足时会产生更高的开关损耗和米勒效应导致转换速度变慢。

五、典型应用

  • 低压直流负载开关(低侧开关)
  • 电池管理与电源路径切换
  • 便携式设备的功率管理与外围 MOSFET
  • 小功率 DC-DC 变换器的同步或非同步开关(需注意频率与散热)

六、选型建议与注意事项

  • 若系统门驱能提供 ≥4.5V,可发挥较低 RDS(on) 优势;若仅有 2.5V 门驱,应评估更高的导通电阻对功耗的影响。
  • 在接近最大连续电流或高占空比工作时,务必通过 PCB 增加散热面积并验证封装温升。
  • 高频开关应用需关注 Qg、Ciss、Crss 对驱动器的要求,必要时选择驱动能力更强的门驱或并联器件。
  • 在关键可靠性环境(高温或长时间满载)下,建议做温升与长期应力验证。

总结:AO3400-ED 在小型封装下提供平衡的导通性能与开关特性,适合对体积和能效有要求的低压功率控制场合。选型时结合门驱电压、开关频率与散热条件进行综合评估。

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