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Hottech 4953
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Hottech 4953
- Type
- HOTTECH
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HOTTECH
- Electronic Component
- 4953
- Electronic Component
- 1
- Package
- SO-8
- Electronic Component
- 2 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.18g
- Electronic Component
- 1
- Electronic Component
- BM0228550665
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 2.5W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 520pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
4953产品概述
一、产品简介
4953为Hottech（合科泰）出品的双通道P沟道场效应管，封装为SO-8。每通道额定漏-源电压30V，连续漏极电流可达5.1A，适合中低压、高集成度的电源与开关场合。器件在设计上兼顾了低导通损耗与较小的开关电荷，便于提高系统效率与降低EMI。
二、主要特性
- 双通道P沟道MOSFET，SO-8小型封装，节省PCB空间。
- 漏源电压(Vdss)：30V；连续漏极电流(Id)：5.1A。
- 典型导通电阻(RDS(on))：55mΩ（标称测试条件为Vgs=10V）。
- 阈值电压(Vgs(th))：1.1V（典型值）。
- 总栅极电荷(Qg)：11nC（@10V），便于门极驱动设计。
- 输入电容(Ciss)：520pF，反向传输电容(Crss)：70pF（@15V）。
- 功耗(Pd)：2.5W，工作温度范围：-55℃至+150℃。
三、应用场景
适用于便携式设备电源管理、负载高侧开关、逆接保护、LED驱动、双路电源切换及轻中功率DC-DC拓扑。双通道设计特别适合需要两路对称高侧控制或配合双相管理的电路。
四、使用建议
- 作为P沟道器件常用于高侧开关，栅极需拉低以导通；注意栅源电压极性与绝对最大额定值。
- 依据Pd和实际工作电流，合理设计散热铜箔与热过孔，必要时增加散热板或提升PCB铜厚。
- 为抑制开关振铃与降低EMI，建议在门极串联小电阻并在电源侧增加退耦电容与吸收元件。
- 布局时保证漏、源、栅走线尽量短且宽，电源和地回流路径应低阻低感。
五、可靠性与选型提示
SO-8封装便于自动贴片与大批量生产，双通道集成能简化外部元件与布线。选型时关注实际驱动电压与开通时的RDS(on)条件，评估QG与Ciss对驱动器的要求，确认热性能满足长时间负载工况。总体而言，4953适合追求体积小、效率中等且要求双路高侧控制的应用场景。
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