WMSIC Electronic Components

Hottech HKTG48N10

ModelHKTG48N10
PackagePDFN5x6-8
BrandHottech
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Hottech HKTG48N10
Type
HOTTECH
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HOTTECH
Electronic Component
HKTG48N10
Electronic Component
1
Package
PDFN5x6-8
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.17g
Electronic Component
1
Electronic Component
BM0264463951
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
100W
Gate Voltage(Vgs)
±20V
Electronic Component
Electronic Component
Electronic Component
5000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

HKTG48N10 产品概述

一、产品简介

HKTG48N10 是合科泰(Hottech)推出的一款高性能 N 沟道功率 MOSFET,单颗器件额定漏源电压 Vdss = 100V,连续漏极电流 Id = 79A,低导通电阻 RDS(on) = 6.8 mΩ(Vgs = 10V)。器件采用 PDFN-8 (5×6 mm) 小型封装,适合中高功率密度的开关电源与电机驱动等应用。

二、主要规格一览

  • 类型:N 沟道 MOSFET
  • Vdss:100V
  • Id(连续):79A
  • RDS(on):6.8 mΩ @ Vgs = 10V
  • Vgs(th):1.8V(典型)
  • 最大耗散功率 Pd:100W
  • 工作温度:-55℃ ~ +150℃
  • 绝对栅极电压:Vgs = ±20V
  • Ciss = 3.65 nF;Coss = 320 pF;Crss = 22 pF

三、电气与开关特性要点

Ciss 较大(3.65 nF),在驱动时会带来一定的驱动电荷(粗略 Qg ≈ Ciss×Vgs ≈ 36 nC @10V),因此建议配备驱动电路能提供足够电流以实现期望的开关速度。Crss(22 pF)较小,有利于降低米勒效应,提高抗干扰能力和开关稳定性。Coss(320 pF)对开关损耗有直接影响,需在换相瞬间考虑能量回收或吸收方案。

四、热管理与封装特性

PDFN5×6-8 封装带有散热焊盘,器件 Pd 标称 100W,但实际热性能强烈依赖 PCB 铜箔面积与过孔散热。建议在底部敷铜并增加多盏通孔与热盲 vias,确保良好热阻路径;在高功率工作点下应评估结温并留足裕量。

五、典型应用

  • 断续/连续导通型开关电源(DC-DC、AC-DC)
  • 同步整流与降压转换器
  • 无刷直流电机驱动与驱动桥臂
  • 负载开关、高侧/低侧开关(需配合栅极驱动)

六、设计与布局建议

  • 短且粗的漏源走线以降低寄生电阻与感抗;布置大面积散热铜箔并使用多通孔。
  • 栅极驱动器输出能力应匹配器件 Ciss,推荐门阻 5–20Ω 以平衡开关速度与振铃。
  • 对于 5V 驱动器,注意 Vgs(th)=1.8V 表明器件非严格低压逻辑级驱动,若需要最低 RDS(on) 应使用 10–12V 驱动电压。

七、保护与并联使用建议

  • 对感性负载建议并联 TVS 或 RC 吸收以抑制过压;在有反向电流场合考虑续流二极管或回授设计。
  • 并联器件时应注意电流共享,必要时在源端加微小阻抗实现均流;匹配驱动与布局以防单管过流。

八、总结

HKTG48N10 以 100V/79A 的额定能力与 6.8 mΩ 的低导通电阻,在中高功率开关应用中兼具低损耗与高电流承载能力。合理的驱动设计、热管理与 PCB 布局是发挥其性能的关键。若需器件原理图参数或具体封装图与热阻数据,可进一步索取完整数据手册。

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