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Hottech HKTD70N04
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Hottech HKTD70N04
- Type
- HOTTECH
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HOTTECH
- Electronic Component
- HKTD70N04
- Electronic Component
- 1
- Package
- TO-252
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.45g
- Electronic Component
- 1
- Electronic Component
- BM0264463954
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 108W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 40V
- Capacitor(Ciss)
- 4.3nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
HKTD70N04 产品概述
一、概述
HKTD70N04 是合科泰（Hottech）推出的一款 N 沟道功率 MOSFET，额定漏源电压 40V，连续漏极电流 70A，封装为常用的表面贴装 TO-252 (DPAK)。器件面向开关电源、同步整流、功率管理和电机驱动等中高电流、低压应用，具有低导通电阻和宽工作温度范围。
二、主要参数
- 漏源电压 Vdss：40V
- 连续漏极电流 Id：70A
- 导通电阻 RDS(on)：9.5 mΩ @ Vgs=10V
- 耗散功率 Pd：108W（参考器件条件，实际需按散热条件降额）
- 阈值电压 Vgs(th)：约 2V
- 输入电容 Ciss：4.3 nF；反向传输电容 Crss：188 pF
- 工作温度：-55℃ ~ +150℃
- 封装：TO-252（DPAK），便于贴片工艺与散热处理
三、性能亮点
- 低 RDS(on)（9.5 mΩ@10V），在较高电流下能显著降低导通损耗，适合大电流开关和同步整流场合。
- 40V 电压等级适配 12V/24V 系统及中低压转换器。
- 适中的 Ciss/Crss 对开关损耗和开关速度有平衡表现，配合合适门极驱动能获得良好效率与 EMI 控制。
四、驱动与开关建议
- 推荐 Vgs 驱动电压 10V 以达到标称 RDS(on)，阈值电压 ~2V 表示在 5V 逻辑电平下未必能达到最小 RDS(on)。
- 门极驱动要提供足够电流以克服 4.3 nF 的输入电容，使用专用驱动器或合适功率的驱动晶体管/IC 可减少开关损耗。
- 在感性负载或高 dv/dt 场合，建议串联门极电阻与并联钳位器件，配合续流二极管或同步整流以保护器件。
五、热设计与 PCB 布局
- 虽然器件 Pd 标称较高，但连续 70A 依赖良好散热：建议使用大面积铜箔散热垫、多层大面积地/电平面和过孔热通道。
- 布局要保证电流回路最短、低寄生电感，门极回路独立并靠近器件。建议在 DPAK 焊盘下加焊盘并打多排过孔以增强散热。
六、典型应用
- 同步整流与降压转换器（DC-DC）
- 电机驱动与功率开关模块
- 负载开关、保护电路、逆变器中低压侧功率开关
七、选型与注意事项
- 使用时按实际工作温度与 PCB 散热能力对电流和功耗进行降额计算；例如在 RDS(on)=9.5 mΩ 时，30A 对应损耗约 8.6W，70A 对应损耗约 46.6W，需评估散热能力是否足够。
- 器件为静电敏感器件，建议遵循 ESD 防护和焊接工艺规范；最终设计请参考完整数据手册以确认各项极限参数与热阻曲线。
如需封装引脚图、典型电路、或基于目标系统的热仿真与布局建议，可提供电路拓扑与 PCB 资料以便进一步优化设计。
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