WMSIC Electronic Components

Hottech HKTD50N06

ModelHKTD50N06
PackageTO-252
BrandHottech
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Hottech HKTD50N06
Type
HOTTECH
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HOTTECH
Electronic Component
HKTD50N06
Electronic Component
1
Package
TO-252
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.44g
Electronic Component
1
Electronic Component
BM0264463957
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
45W
Electronic Component
Electronic Component
Electronic Component
2500
Voltage(Vdss)
60V
Capacitor(Ciss)
1.25nF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

HKTD50N06 产品概述

一、产品简介

HKTD50N06 是由 Hottech(合科泰) 提供的一款 N 沟道功率 MOSFET,封装为 TO-252(DPAK),适合中高电流开关场合。该器件额定漏源耐压 Vdss 为 60V,连续漏极电流 Id 为 50A,导通电阻 RDS(on) 为 23mΩ(测试条件 4.5V 门极驱动),单片功耗 Pd 为 45W,工作温度范围 -55℃ 到 +150℃。器件输入电容 Ciss 为 1.25nF,反向传输电容 Crss 为 90pF,栅极阈值电压 Vgs(th) 约 2.5V。出货数量为 1 只。

二、主要规格亮点

  • 耐压 60V,适用于 12V/24V 系统及中等耐压拓扑;
  • 50A 连续电流能力,满足较大电流通断需求;
  • 23mΩ 的 RDS(on)(4.5V),对于逻辑电平驱动系统具有较低的导通损耗;
  • 较小的 Ciss(1.25nF)有利于快速开关;Crss 90pF 有助于控制米勒效应对开关过渡的影响;
  • TO-252(DPAK)表面贴装,便于工业级模块化及散热处理。

三、典型应用场景

  • 电机驱动与电机控制器(车载、工业小功率场合);
  • 开关电源(同步整流、降压/升压变换);
  • 负载开关、继电器替代、功率分配模块;
  • DC-DC 转换、逆变器前端功率开关。

四、热管理与封装建议

TO-252 为功率芯片常用的 DPAK 封装,需注意焊盘与散热铜皮的设计。建议:

  • 在器件底部和引脚处布局大面积散热铜箔,必要时加热导孔(thermal vias)到背面散热层;
  • 在高功耗场景下配套散热器或铜基板,确保结温不超限,从而维持长期可靠性;
  • 参考 45W 的耗散功率,设计时留有裕量并考虑实际工作占空比与散热条件。

五、驱动与 PCB 布局要点

  • 虽在 4.5V 下有 23mΩ 的 RDS(on),为降低导通损耗并兼顾开关速度,推荐门极驱动电压可在 10~12V 范围内评估;
  • 使用合适的门极电阻以抑制振铃并限制电流峰值,同时在高 dV/dt 环境下考虑添加栅极瞬态抑制措施;
  • 布局时采用短且宽的电流回路、减小环路电感,源端尽量靠近电流负载与输入电容。

六、可靠性与使用建议

  • 器件工作温度覆盖 -55℃~+150℃,适合工业级应用,但长期使用应避免高结温运行以延长寿命;
  • 在高频开关与大电流場景下,关注开关损耗与热瞬态,必要时做热仿真与实测验证;
  • 为提高系统可靠性,配合熔断、过流和过温保护电路使用。

总结:HKTD50N06 以 60V/50A 的电气能力、较低 RDS(on) 与 TO-252 的易装配特性,为中功率开关电源、负载开关及电机驱动等应用提供了性价比较高的解决方案。根据具体电路与热条件,合理设计驱动与散热即可发挥该器件的最佳性能。

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