WMSIC Electronic Components

HL S125N06F

ModelS125N06F
PackagePDFN5x6-8
BrandHL
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HL S125N06F
Type
HL
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HL
Electronic Component
S125N06F
Electronic Component
1
Package
PDFN5x6-8
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.173g
Electronic Component
1
Electronic Component
BM0265847004
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
113W
Electronic Component
Electronic Component
Electronic Component
5000
Voltage(Vdss)
60V
Capacitor(Ciss)
6.915nF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

S125N06F(富海微HL)产品概述

一、核心参数概览

S125N06F是富海微(HL)推出的N沟道增强型MOSFET,核心参数覆盖直流特性、交流特性及环境适应性,具体如下:

  • 直流关键参数:漏源击穿电压(Vdss)60V,连续漏极电流(Id)125A(25℃),最大耗散功率(Pd)113W,阈值电压(Vgs(th))2.2V(Id=250μA时);
  • 交流关键参数:栅极总电荷量(Qg)111.56nC(Vgs=10V时),输入电容(Ciss)6.915nF,反向传输电容(Crss)132pF,输出电容(Coss)3.282nF;
  • 环境与封装:工作温度范围-55℃~+150℃,采用PDFN5x6表面贴装封装。

二、关键性能亮点

1. 低导通损耗与高电流承载能力

该器件导通电阻(RDS(on))仅2.9mΩ(Vgs=10V时),结合125A连续漏极电流,可有效降低大电流场景下的导通损耗——例如在100A负载下,导通损耗仅为29W(I²R计算),比同类4mΩ器件减少约27%发热,简化散热设计。

2. 开关特性平衡

栅极总电荷量(Qg)111.56nC处于同规格器件的合理区间,配合较低的输入电容(Ciss)和反向传输电容(Crss),实现开关速度与EMI的平衡:既避免开关过慢导致效率下降,也减少过快开关带来的电磁干扰,适配中高频(100kHz以内)应用。

3. 宽温适应性

工作温度覆盖-55℃至+150℃,超出常规车载级(-40℃+125℃)和工业级(-40℃+85℃)要求,可在极端环境(如低温户外设备、高温工业车间)下稳定工作,无需额外降额。

4. 紧凑封装设计

PDFN5x6封装尺寸仅5mm×6mm,比TO-263封装小约30%,且底部直接与PCB铜箔接触(热阻低至~1℃/W),适合高密度PCB布局(如小型电动工具、便携式电源),同时降低系统体积与重量。

三、封装与可靠性分析

PDFN5x6是专为功率器件设计的表面贴装封装,具有以下可靠性优势:

  • 散热效率:封装底部无引脚设计,直接贴合PCB铜箔,快速传导热量,适配113W耗散功率;
  • 机械强度:无引脚结构减少焊接缺陷风险,可承受振动、冲击(符合IEC 60068-2-6标准);
  • ESD防护:内置基础ESD防护(人体模式±2kV),降低生产、测试中的静电损坏概率。

四、典型应用场景

S125N06F因低压大电流特性,适用于以下核心场景:

  1. 低压电机驱动:电动工具(电钻、电锯)、扫地机器人、平衡车的电机控制回路;
  2. BMS辅助系统:新能源汽车12V/24V低压辅助电源的充放电开关、电池均衡回路;
  3. DC-DC变换器:车载12V转5V/3.3V同步整流、便携式移动电源的升压/降压模块;
  4. 大电流负载开关:服务器电源、工业控制设备的负载通断(替代传统继电器)。

五、选型优势对比

与同规格(60V/125A)的传统MOSFET相比,S125N06F优势明显:

对比项 S125N06F 同类产品平均 RDS(on)@10V 2.9mΩ 3.5mΩ 最高工作温度 +150℃ +125℃ 封装面积 30mm² 45mm² 导通损耗(100A) 29W 35W

六、应用注意事项

  1. 栅极驱动:建议驱动电压Vgs控制在8V~12V(最优10V),避免超过±20V(栅极最大耐压),防止氧化层击穿;
  2. 散热设计:PCB需设计≥10cm²的2oz铜箔散热区,若负载功率>80W,需加装小型散热片;
  3. 电流降额:连续工作电流建议≤80A(降额20%),峰值电流≤150A(短时间<1s);
  4. 静电防护:生产、测试需佩戴防静电手环,使用防静电工作台,避免直接触摸引脚。

综上,S125N06F凭借低导通损耗、宽温适应性、紧凑封装等优势,成为低压大电流应用的高性价比选择,尤其适合电动工具、车载辅助系统等场景。

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