WMSIC Electronic Components

Jingdao Microelectronics MMBT3904

ModelMMBT3904
PackageSOT-23
BrandElectronic
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Electronic MMBT3904
Type
Jingdao Microelectronics
Minimum package
3000 编带

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic
Electronic Component
MMBT3904
Electronic Component
1
Package
SOT-23
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.032g
Electronic Component
1
Electronic Component
BM0227367167
Operating Temperature
55℃~+150℃
Transistor Type
NPN
Frequency(f T)
300MHz
Power Dissipation(Pd)
200mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MMBT3904 产品概述

一、产品简介

MMBT3904 是晶导微电子推出的一款小功率 NPN 双极结晶体管,采用 SOT-23 封装,适用于通用开关与放大场合。器件在 -55℃ 至 +150℃ 的宽温区间内可靠工作,针对现代小型化电路的 PCB 布局和自动贴装工艺进行了优化。

二、主要参数

  • 晶体管类型:NPN(单颗)
  • 直流电流增益 hFE:100(测量条件 10mA,VCE≈1V)
  • 集电极电流 Ic:最高 200mA(脉冲或短时条件须受功耗限制)
  • 集电极-射极击穿电压 VCEO:40V
  • 射极-基极击穿电压 VEBO:6V
  • 集电极截止电流 ICBO:100nA(典型低漏电性能)
  • 特征频率 fT:300MHz(高频特性良好,适合小信号放大)
  • 集-射极饱和电压 VCE(sat):约 300mV(条件:Ic=50mA, Ib=5mA)
  • 耗散功率 Pd:200mW(SOT-23 封装,需考虑 PCB 热阻)
  • 工作温度范围:-55℃ 至 +150℃

三、特性与优势

  • 小型封装(SOT-23),便于高密度布板和自动化贴装。
  • hFE≈100,在中小电流区域提供稳定的放大倍数,便于偏置设计。
  • 较高的 fT(300MHz)使其在高频小信号放大和开关应用中表现良好。
  • 低 ICBO(100nA)有利于低功耗与高阻态下的电路稳定性。
  • 低 VCE(sat) 在开关导通时减少压降与功耗,提升效率。

四、典型应用场景

  • 通用开关驱动:继电器、指示灯或小功率负载的驱动。
  • 小信号放大:射频前端的低功率放大、信号缓冲与电平转换。
  • 电平移位、开漏输出与数字电路接口电路。
  • 自动测试、传感器前端以及消费类电子中常见的通用晶体管替代方案。

五、封装与热管理建议

  • SOT-23 封装耗散能力有限,标称 Pd=200mW。实际使用时应根据 PCB 铜箔尺寸、过孔和散热层设计热路径,避免长时间在高电流下运行导致结温过高。
  • 连续工作电流建议远低于 200mA(例如 ≤50mA)以确保长期可靠性,较大电流场合应采取散热强化或选用更高功耗封装器件。

六、使用注意事项

  • 在饱和开关应用中,应提供充足基极电流。按器件规范 Ic=50mA、Ib=5mA 的条件,饱和时的强制 β≈10,设计时建议按此留足基极驱动能力。
  • 射极-基极击穿电压较低(VEBO≈6V),在电路调试和静电防护时需注意不要在基极对射极施加超过额定值的反向电压。
  • 对于高频应用,注意寄生电容与走线布局,合理调整偏置与匹配网络以发挥 fT 优势。

七、选型建议

若电路要求小封装、高增益与中等频率性能,且功耗与环境温度在可控范围内,MMBT3904 是成本与性能均衡的选择。对于需要长时间大电流工作或更严格热裕度的场合,应考虑更大功耗封装或功率型晶体管。

如需器件的详细典型特性曲线、封装尺寸或 SPICE 模型,可进一步提供以便给出更精确的电路验证建议。

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