Model & package intelligence
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Jingdao Microelectronics T-1N4148WA
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic T-1N4148WA
- Type
- Jingdao Microelectronics
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- T-1N4148WA
- Electronic Component
- 1
- Package
- SOD-123W
- Electronic Component
- Switch Diode
- Electronic Component
- 0.032g
- Electronic Component
- 1
- Electronic Component
- BM0228088914
- Current
- 150mA
- Diode
- Electronic Component
- Current(Ir)
- 50uA@75V
- (Vf)
- 1.25V@150mA
- Power Dissipation(Pd)
- 400mW
- Electronic Component
- 55℃~+150℃@(Tj)
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
T-1N4148WA 产品概述
一、产品简介
T-1N4148WA 为晶导微电子推出的小型表面贴装快速二极管，封装为 SOD-123W。器件为独立式二极管，针对小信号开关、快速整流与浪涌抑制等应用进行了参数优化，兼顾高速恢复与较好的反向耐压能力，适合对体积与响应速度有要求的电子系统。
二、主要特性
- 二极管配置：独立式
- 品牌：晶导微电子
- 封装：SOD-123W（小外形、贴片安装）
- 直流反向耐压 Vr = 100 V
- 平均整流电流 Io = 150 mA
- 功率耗散 Pd = 400 mW
- 正向压降 Vf = 1.25 V @ 150 mA
- 反向电流 Ir = 50 μA @ 75 V
- 反向恢复时间 Trr = 4 ns
- 工作结温范围 Tj = -55 ℃ ~ +150 ℃
三、电气特性说明
正向压降 1.25V（在 150mA 条件）表明在中小电流整流时器件具有合理的导通损耗；反向恢复时间 4ns 使其能够满足大多数高速开关与脉冲场合的要求。反向漏流在高压下（75V）约 50μA，表明在高压阻断时损耗较小，但随温度升高会增加，设计时需预留裕量。
四、主要应用场景
- 小信号高速开关与逻辑电路保护
- 小电流整流与二次侧供电滤波
- 针对瞬态浪涌的吸收与钳位电路
- 消费电子、通信设备、仪器仪表中对速度与体积有要求的电路
五、封装与热管理建议
SOD-123W 封装体积小，便于高密度贴装。由于 Pd = 400 mW，器件对散热较敏感，建议：
- 布局时采用短且低阻抗的走线，靠近地或散热铜箔以改善散热；
- 勿在高环境温度下长时间满载工作，应进行功率和结温的热仿真与降额设计；
- 对于可能出现的浪涌电流，应评估峰值与平均功率，避免超过器件极限。
六、使用注意事项
- 在高反向电压边界工作时，应考虑反向漏流随温度上升的影响并留有裕量；
- 对于需要严格低漏流或更高电流能力的场合，可选择更大功率或低漏型器件替代；
- 建议按制造商推荐的焊接规范进行回流焊，避免超过器件允许的热循环应力；
- 对于关键可靠性应用，参考完整数据手册进行额定值校对与测试验证。
T-1N4148WA 在兼顾高速响应与较高反向耐压的前提下，提供了体积小、适合表贴装配的解决方案。设计时应注意热管理与电压/电流的降额，以确保长期可靠工作。若需更详细的电气特性曲线与封装尺寸，请参见晶导微电子的完整数据手册。
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