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Jingdao Microelectronics T-1N4148WB
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic T-1N4148WB
- Type
- Jingdao Microelectronics
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- T-1N4148WB
- Electronic Component
- 1
- Package
- SOD-323W
- Electronic Component
- Switch Diode
- Electronic Component
- 0.027g
- Electronic Component
- 1
- Electronic Component
- BM0228088912
- Current
- 150mA
- Diode
- Electronic Component
- Current(Ir)
- 50uA@75V
- (Vf)
- 1.25V@150mA
- Power Dissipation(Pd)
- 400mW
- Electronic Component
- 55℃~+150℃@(Tj)
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
T-1N4148WB 产品概述
一、产品简介
T-1N4148WB 是晶导微电子推出的一款独立式开关二极管，采用 SOD-323W 小型贴片封装。器件以其低正向电压、快速恢复和较低反向漏电的特性，面向高速信号整流、开关与保护等应用场景，适合高密度表贴电路设计。
二、主要参数
- 正向压降 (Vf)：1.25 V @ 150 mA
- 整流电流：150 mA（直流）
- 直流反向耐压 (Vr)：100 V
- 反向电流 (Ir)：50 μA @ 75 V
- 反向恢复时间 (Trr)：4 ns
- 耗散功率 (Pd)：400 mW
- 工作结温范围 (Tj)：-55 ℃ 至 +150 ℃
- 封装：SOD-323W（独立式）
三、性能亮点
- 低正向压降：在 150 mA 条件下 Vf=1.25 V，有利于降低导通损耗与发热。
- 快速恢复：4 ns 的反向恢复时间，适合高频开关与脉冲信号处理。
- 高耐压与低漏电：100 V 的耐压结合 75 V 时 50 μA 的低反向电流，适用于中高压侧保护与整流。
- 小尺寸封装：SOD-323W 占板面积小，便于实现高密度 PCB 布局。
四、典型应用
- 高频开关、脉冲整流与限幅
- 信号整形、峰值检测与逻辑电平保护
- 电源反向保护、浪涌抑制与阻断反向注入
- 小功率适配器、便携设备与通信模块中作为快速切换元件
五、封装与热特性
SOD-323W 封装体积小，热阻相对较高，器件最大耗散功率为 400 mW。设计 PCB 时应注意散热路径与铜箔面积，避免长期在额定电流下边界温升过高。器件允许的结温上限为 +150 ℃，实际应用中应预留安全裕度。
六、使用与可靠性建议
- 贴装与焊接：建议遵循无铅回流焊工艺规范并控制回流峰值温度与时间，避免超过器件允许的热应力。
- 电流与功耗评估：在长期工作条件下计算正向损耗（Pd ≈ Vf × If），并确保 PCB 散热设计能将结温控制在安全范围内。
- 过压/浪涌保护：若存在短时浪涌或高能脉冲，建议配合限流或吸收元件使用以延长器件寿命。
- 存储与环境：避免潮湿、高温及机械应力影响封装完整性，贴片器件在回流前应按潮湿敏感等级（MSL）妥善干燥储存。
七、总结
T-1N4148WB 以其低 Vf、快速恢复和 100 V 耐压特性，结合小型 SOD-323W 封装，为高速开关和信号整流提供了可靠且节省空间的解决方案，适合消费电子、通信与工业控制等多种小功率场合。若需器件样品或批量采购信息，请联系晶导微电子授权渠道。
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