WMSIC Electronic Components

Jingdao Microelectronics ES2J

ModelES2J
PackageSMA
BrandElectronic
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Electronic ES2J
Type
Jingdao Microelectronics
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic
Electronic Component
ES2J
Electronic Component
1
Package
SMA
Electronic Component
Fast Recovery / High-Efficiency Diode
Electronic Component
0.12g
Electronic Component
1
Electronic Component
BM0227647762
Current
2A
Diode
1
Current(Ir)
5uA@600V
(Vf)
1.68V@2A
Electronic Component
55℃~+150℃
Electronic Component
Electronic Component
Electronic Component
5000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ES2J 快恢复/高效率二极管 — 产品概述

一、产品简介

ES2J 为晶导微电子推出的一款独立式快恢复、高效率整流二极管,采用 SMA 封装设计,适用于高压整流与开关电源回路保护。器件具备 600V 的直流反向耐压和 2A 的持续整流能力,结合较短的反向恢复时间(Trr),在中等功率开关电源和整流应用中能提供良好的效率与抗干扰性能。

二、主要特性

  • 独立式二极管,封装:SMA,便于安装与更换
  • 直流反向耐压(Vr):600V,适合离线电源与高压逆变场合
  • 正向压降(Vf):典型 1.68V @ 2A,兼顾导通损耗与热耗散
  • 最大整流电流:2A(直流、持续)
  • 非重复峰值浪涌电流(Ifsm):50A,支持短时浪涌承受能力
  • 反向电流(Ir):5µA @ 600V,低反向漏电利于高压场合
  • 反向恢复时间(Trr):35ns,属快恢复型,有利于减小开关损耗与振铃

三、电气参数(典型/代表值)

  • 工作结温范围:-55℃ 至 +150℃(Tj)
  • Vf = 1.68V @ If = 2A(典型)
  • Ifsm = 50A(非重复峰值,短时浪涌)
  • Ir = 5µA @ Vr = 600V
  • Trr ≈ 35ns(典型)

注:具体极限参数、温度依赖特性及安全工作区请参考官方数据手册。

四、封装与机械特征

  • 封装形式:SMA(表面贴装/可波峰或回流焊)
  • SMA 封装尺寸小、占板面积低,但散热能力受限,需良好 PCB 铜箔与散热设计以保证长期可靠性。
  • 建议在高电流或连续工作时配合散热铜箔或散热金属垫使用。

五、典型应用场景

  • 开关电源(SMPS)输出整流或续流二极管
  • 离线适配器与充电器整流
  • 功率因数校正(PFC)电路(中间整流)
  • 逆变器与电机驱动的保护回路
  • 电源浪涌抑制与反接保护
  • 太阳能微型逆变器与LED驱动等需要 600V 耐压/快恢复的场合

六、热管理与可靠性建议

  • 由于 SMA 为小体积封装,器件的结温上升较快。实际应用中应避免在高散热负荷下长期以 2A 连续工作,必要时在 PCB 上增大铜箔面积并提供导热路径。
  • 考虑浪涌环境时,Ifsm 为瞬态指标,长期重复浪涌会降低可靠性。尽量通过电路设计降低浪涌幅度或使用滤波/限流元件。
  • 在高温环境下,反向漏电可能上升,应在电路容差内评估 Ir 随温度的影响。

七、使用与焊接注意事项

  • 推荐使用符合封装温度限值的回流焊工艺,避免超出器件允许的峰值焊接温度和时长。
  • 焊接后建议进行必要的清洗与残渣处理,防止焊剂残留影响高压绝缘。
  • 安装时注意极性标识,防止因接反造成器件损坏或系统故障。

八、选型与采购建议

  • 若应用需更低 Vf 或更高电流能力,可考虑并联多个器件或选用更大封装型号(注意均流与热管理);若需更短 Trr 或更低开关损耗,可对比肖特基或超快速恢复系列。
  • 订购时请确认完整型号(ES2J)、批次及包装形式,并索取最新数据手册和可靠性报告以满足设计验证与认证要求。

如需进一步的器件数据表、温度特性曲线或在特定电路中的仿真建议,可提供具体应用场景与电路条件,我可协助进行针对性的选型与设计优化。

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