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Jingdao Microelectronics ES1J
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic ES1J
- Type
- Jingdao Microelectronics
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- ES1J
- Electronic Component
- 1
- Package
- SMA
- Electronic Component
- Fast Recovery / High-Efficiency Diode
- Electronic Component
- 0.12g
- Electronic Component
- 1
- Electronic Component
- BM0227367060
- Current
- 1A
- Diode
- 1
- Current(Ir)
- 5uA@600V
- (Vf)
- 1.7V@1A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
ES1J 快恢复/高效率二极管 产品概述
一 基本参数
ES1J 为晶导微电子出品的独立式快恢复高效率整流二极管，封装为 SMA（表面贴装）。主要电气参数：正向压降 Vf = 1.7V @ 1A，直流反向耐压 Vr = 600V，整流电流 IF(DC) = 1A，非重复峰值浪涌电流 Ifsm = 30A，反向电流 Ir = 5µA @ 600V，反向恢复时间 Trr = 35ns，工作结温范围 Tj = -55℃ ~ +150℃。
二 特性与优势
- 快恢复特性（Trr≈35ns）：在开关电源和高频变换中能有效降低开关损耗与电磁干扰，相比传统慢恢复二极管效率更高。
- 高耐压（600V）：适用于较高直流母线电压场合，如中小功率开关电源、逆变器边缘保护等。
- 低静态漏电（Ir 5µA）：在高耐压状态下泄漏电流小，有利于保持系统静态功耗低。
- SMA 封装：体积小、焊接可靠，适合自动贴装与密集布局。
三 典型应用
- 开关电源（SMPS）整流与续流二极管
- 逆变器与功率变换器的自由轮回/吸收回路
- 功率适配器、LED 驱动、工业电源
- 极性保护、浪涌吸收与整流模块
四 设计与热管理建议
ES1J 在 1A 连续工况下正向损耗约为 1.7W（P = Vf × IF），在高功率或持续高占空比场合需注意 PCB 散热：扩大焊盘面积、使用热铜填充或下层散热金属，避免长期工作点接近结温上限。反向漏流会随温度上升增大，设计时预留裕量并进行温升测试。
五 选型与注意事项
- 若需要更低正向压降可考虑肖特基，但肖特基耐压通常低于 600V；若需求更快恢复时间且波形严苛，可选超快恢复或软恢复型号。
- 开关频率和波形对 Trr 敏感，频率越高、 dv/dt 越大时对恢复特性要求越高。
- 焊接时遵循封装的焊接温度曲线与回流规范，避免过热和机械应力损伤。
六 封装与可靠性
SMA 封装适合自动化贴装与高密度电路板。ES1J 设计满足常见工业级温度范围（-55℃~150℃），在可靠性设计时建议按功率和结温进行适当降额以延长寿命。购买时确认批次与出厂检验报告以确保一致性。
如需样片参数曲线、典型应用电路或 PCB 焊盘建议图，可提供进一步资料和参考图档。
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