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Jingdao Microelectronics 2N7002AK
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic 2N7002AK
- Type
- Jingdao Microelectronics
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- 2N7002AK
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.032g
- Electronic Component
- 1
- Electronic Component
- BM0230630741
- Operating Temperature
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 23pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2N7002AK 产品概述
一、概述
2N7002AK 是晶导微电子推出的一款小信号 N 沟增强型 MOSFET，额定漏源电压为 60V，连续漏极电流达 300mA，适用于中低电流、较高电压场合的开关与放大。器件采用 SOT-23 小外形封装，体积小、易于贴片组装，适合空间受限的消费电子与工业控制板。
二、关键电气参数
- 漏源电压 (Vdss)：60V
- 连续漏极电流 (Id)：300mA
- 导通电阻 (RDS(on))：3Ω（Vgs=4.5V，Id=0.2A）
- 阈值电压 (Vgs(th))：2.5V
- 输入电容 (Ciss)：23pF @ 25V
- 反向传输电容 (Crss)：1.4pF
- 输出电容 (Coss)：3.4pF
- 工作温度范围：-55℃ ~ +150℃
三、特点与优势
- 高耐压（60V），适合高电压侧开关与保护应用。
- 小输入、电输出电容（Ciss/Crss/Coss），切换速度快、降低驱动损耗，有利于高频开关场景。
- SOT-23 封装，适合自动化贴装与小型化设计。
- 宽温工作范围，满足工业级可靠性要求。
四、典型应用
- 逻辑电平开关：用于微控制器驱动的小功率开关。
- 负载断开/保护：高压但低电流的电源断开或反向保护。
- 电平移位、电源管理与信号调节。
- 小型开关电源与功率管理电路中的高压侧开关。
五、设计注意事项
- 在高电流或需低损耗场合，须注意 RDS(on) 相对较大（3Ω），可能导致显著功耗与发热。
- Vgs(th)=2.5V，驱动电压应有余量以确保器件完全导通；若使用 3.3V 或更低电压驱动，建议验证实际导通性能。
- 留意封装散热限制与环境温度，确保在额定条件下可靠工作。
六、总结
2N7002AK 是一款针对小信号、高电压场景优化的 N 沟 MOSFET，兼顾耐压与切换性能，适用于空间受限且需高压耐受的控制与保护电路。晶导微电子提供的该型号在性能与成本间具有良好平衡，是工程设计中常用的通用开关器件选择。
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