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Jingdao Microelectronics SS56
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic SS56
- Type
- Jingdao Microelectronics
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- SS56
- Electronic Component
- 1
- Package
- SMA(DO-214AC)
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.119g
- Electronic Component
- 1
- Electronic Component
- BM0227663761
- Current
- 5A
- Diode
- 1
- Current(Ir)
- 300uA@60V
- (Vf)
- 700mV@5A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SS56 肖特基二极管 产品概述
一、产品简介
SS56 是晶导微电子推出的一款功率肖特基整流二极管，封装为 SMA (DO-214AC)，面向中功率整流、保护与续流应用。器件强调在 5A 连续整流条件下具有较低的正向压降与快速切换特性，适合开关电源、DC-DC 转换器、整流桥和反接保护等场合。
二、主要电气参数
- 正向压降 (Vf)：700 mV @ IF = 5 A（典型值，实际随温度与工况变化）
- 直流反向耐压 (Vr)：60 V
- 反向电流 (Ir)：300 μA @ VR = 60 V（注意随温度上升会显著增加）
- 整流电流：IF(RMS) / IF(平均) = 5 A（连续工作）
- 非重复峰值浪涌电流 (Ifsm)：150 A（单次冲击型浪涌能力）
- 工作结温范围：-55 ℃ ~ +150 ℃
三、封装与热特性
SMA (DO-214AC) 为表贴封装，适合自动贴装与回流焊工艺。封装体积小、导热面有限，须通过合理 PCB 散热设计（扩大铜箔面积、加热孔或散热铜皮）来降低结温。在高电流或脉冲条件下，建议评估结-环境温升并适当降额使用。
四、优势与限制
优势：
- 在 5 A 等级中拥有较为平衡的 Vf 与散热体积，适合占板面积受限的应用。
- Ifsm 达到 150 A，能承受短时浪涌与启动冲击。
限制：
- 300 μA 的反向漏电在高温或高阻抗电路中可能影响性能，需评估漏电带来的静态功耗或偏置误差。
- SMA 封装热阻相对较高，不适合长期大电流高结温工况。
五、典型应用场景
- 开关电源与整流桥（中小功率）
- 降压转换器续流二极管与同步整流替代件
- 电源反接保护与极性保护电路
- 电池充放电保护电路（需注意漏电）
- 汽车电子与工业控制（在工作温度允许的前提下）
六、设计与使用建议
- 布局时在二极管阴极/阳极引脚处增大铜箔面积，并必要时添加热过孔以改善散热。
- 考虑环境最高工作温度时，对 Vf 与 Ir 的升高进行热仿真与降额设计。
- 避免并联多个肖特基二极管以提高电流，因 Vf 不完全一致会导致电流不均。若需更大电流，优先选择更大封装或专用功率器件。
- 在存在高反向电压应力或频繁浪涌的场合，评估浪涌能量并验证 Ifsm 与热循环寿命。
- 参考晶导微电子的回流焊工艺规范与最大结温限制，确保可靠焊接与长期可靠性。
七、选型建议
如需更低正向压降或更高浪涌能力，可考虑更大功率封装（如 DO-214AA/TO-220 等）或低 Vf 的高级肖特基家族；若反向漏电敏感，应寻求低 Ir 等级或采用传统 PN 肖特基替代方案。选型时以最大工作电压、连续电流、热设计余量与应用工况为准。
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