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Jingdao Microelectronics SS8550
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic SS8550
- Type
- Jingdao Microelectronics
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- SS8550
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 PNP
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM0228061667
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- PNP
- Frequency(f T)
- 100MHz
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SS8550 产品概述
一、产品简介
SS8550 是晶导微电子推出的一款小功率 PNP 双极型晶体管，采用紧凑的 SOT-23 封装。该器件以低噪声、高增益和较快的特性频率见长，适用于小信号放大、音频前级、开关与驱动等场合，尤其适配需要空间受限且要求良好开关性能的移动与消费类电子产品。
二、主要参数
- 晶体管类型：PNP
- 最大集电极电流（Ic）：1.5 A
- 集—射极击穿电压（Vceo）：25 V
- 耗散功率（Pd）：200 mW（注意需良好散热）
- 直流电流增益（hFE）：120（在 Ic=100 mA, Vce=1 V 条件下）
- 特征频率（fT）：100 MHz
- 集电极截止电流（Icbo）：100 nA
- 集—射极饱和电压（VCE(sat)）：约 500 mV（低饱和，利于开关）
- 工作温度范围：-55 ℃ ～ +150 ℃
- 射—基极击穿电压（Vebo）：5 V
- 封装：SOT-23
三、优势与特点
- 高增益：在中等电流（100 mA）下 hFE ≈120，便于做电流放大和驱动控制。
- 高频性能好：fT≈100 MHz，适用于宽带、小信号放大。
- 体积小、易贴装：SOT-23 表面贴装，适合自动化贴片工艺与高密度 PCB 布局。
- 低泄漏与合理的饱和电压：Icbo 和 VCE(sat) 的表现有利于降低静态损耗与开关损耗。
四、典型应用
- 小信号放大器、音频前置放大电路；
- 逻辑或微控制器驱动的低压开关电路（注意 PNP 的接法）；
- 电流镜、负载开/关、溢流保护与有限功率的线性驱动场合；
- 与 NPN 器件配合，构成推挽或互补放大级。
五、设计注意事项
- 功率与散热：标称耗散功率仅 200 mW，SOT-23 封装散热受限；在 PCB 设计中应增加散热铜箔并限制集电极电流与电压降，避免长时间在额定 Pd 下工作以致结温超限。
- 基极驱动：基极反向击穿电压 Vebo=5 V，应避免对基极施加过高反向电压；设计基极限流电阻以保护基极。
- 工作电压：Vceo=25 V，超过该电压可能导致击穿，应在系统设计中留有裕量。
- 饱和与开关：VCE(sat)≈500 mV，开关时仍有一定压降，驱动高电流时需确认功耗与温升。
- 验证与替代：在关键设计中建议参考完整数据手册并做实际测试，如需更高功率或更低饱和压，可考虑封装和器件等级不同的替代型号。
六、封装与采购建议
SOT-23 封装便于自动化贴装与小型化设计，适合大批量生产。采购时请确认器件批次与完整数据表，核对参数（特别是 Pd、Vceo、hFE 和 Vebo）以确保符合系统要求。对于对热裕量或开关损耗敏感的应用，建议在评估板上做功耗和温升测试。
简要结论：SS8550 在小功率 PNP 应用中提供了较高的增益与良好的频率特性，适合中低功耗的小信号放大与开关场合，但因 Pd 有限，需重视散热与安全裕度。
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