WMSIC Electronic Components

Jingdao Microelectronics S2MW

ModelS2MW
PackageSOD-123F
BrandElectronic
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Electronic S2MW
Type
Jingdao Microelectronics
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic
Electronic Component
S2MW
Electronic Component
1
Package
SOD-123F
Electronic Component
General Purpose Diode
Electronic Component
0.032g
Electronic Component
1
Electronic Component
BM0229356775
Current
2A
Diode
Electronic Component
Current(Ir)
5uA@1000V
(Vf)
1.1V@2A
Electronic Component
55℃~+150℃
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

S2MW 产品概述

一、产品简介

S2MW 是晶导微电子推出的一款独立式通用整流二极管,封装为 SOD-123F,面向中低功率高耐压整流场景。器件在额定工况下提供 2A 的整流电流,直流反向耐压高达 1kV,适合对耐压和体积有平衡要求的工业与民用电源设计。典型正向压降为 1.1V(IF = 2A),在保证导通损耗可控的同时兼顾散热与可靠性。

二、主要电气参数

  • 型号:S2MW
  • 品牌:晶导微电子
  • 封装:SOD-123F(独立式)
  • 额定整流电流:2A(连续)
  • 非重复峰值浪涌电流 Ifsm:50A
  • 正向压降 Vf:1.1V @ IF = 2A
  • 直流反向耐压 Vr:1000V
  • 反向电流 Ir:≤5µA @ 1000V
  • 工作结温范围:-55℃ ~ +150℃

这些参数表明 S2MW 在高压整流与浪涌吸收场合具有较好性能,反向漏流小,适合要求高耐压且对静态损耗敏感的应用。

三、性能亮点与设计注意事项

  • 高耐压:1000V 的耐压能力使其可以用于高压整流、整机防反接与高压电源二次侧整流。
  • 低漏流:在满耐压条件下反向电流仅 µA 级,有利于降低待机损耗与电流泄漏问题。
  • 浪涌能力:50A 的非重复峰值浪涌电流允许器件承受短时的冲击电流,如输入大电容充电时的浪涌。
  • 热设计:SOD-123F 为小型表面贴装封装,散热能力有限。建议在 PCB 设计中加大热铜箔面积、增加过孔或靠近散热体安放,并在高环境温度下进行电流降额或加风冷,以提高可靠性和寿命。

四、典型应用场景

  • 开关电源次级整流与开关管保护
  • 高压电源、测量仪器的整流与防反接
  • 工业控制电源、照明电源及电池充放电控制
  • 电机驱动与逆变器中对吸收尖峰电流的保护电路

五、使用与可靠性建议

  • 焊接与回流:遵循 SOD-123F 封装的回流曲线规范,避免过温或长时间高温暴露,减少热应力。
  • 测试与检验:对每批器件进行 Vf(2A)、Ir(1000V)与 Ifsm 峰值测试抽检,确保批次一致性。
  • 存储与搬运:避免潮湿环境存放,建议在干燥箱中保管并遵循封装湿敏等级(MSL)处理流程。
  • 降额原则:在高温或长期满载工况下,适当降低持续电流以延长器件寿命;在有频繁浪涌的场景,关注热循环与硅片疲劳影响。

总结:S2MW 以其 1kV 的高耐压、2A 的连续整流能力与 50A 的浪涌承受能力,结合小型 SOD-123F 封装,适合对体积与耐压有综合要求的电源整流和保护场合。合理的 PCB 热设计与降额使用将显著提升产品稳定性与寿命。如需布线参考、焊接曲线或更多电参曲线(如正向 V–I、反向温漂等),可联系晶导微电子获取完整数据手册与应用指南。

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