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Jingdao Microelectronics BZT52C12W
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic BZT52C12W
- Type
- Jingdao Microelectronics
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- BZT52C12W
- Electronic Component
- 1
- Package
- SOD-123
- Electronic Component
- Zener Diode
- Electronic Component
- 0.034g
- Electronic Component
- 50
- (Zzk)
- 150Ω
- (Zzt)
- 25Ω
- Electronic Component
- BM0257409908
- Diode
- 1
- Current(Ir)
- 100nA@8V
- Power Dissipation(Pd)
- 500mW
- Electronic Component
- 11.4V~12.7V
- Electronic Component
- 55℃~+150℃
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BZT52C12W — 晶导微电子 12V 独立式稳压二极管（SOD-123）
一、产品概述
BZT52C12W 是晶导微电子推出的独立式稳压二极管，工作稳压值标称为 12V，实际稳压范围 11.4V ~ 12.7V，采用 SOD-123 小外形封装，适合表面贴装的低功耗基准/稳压场合。该器件以小体积、良好温度范围与低反向泄漏电流为特点，适用于便携与空间受限的电子设备。
二、主要特性
- 标称稳压：12V（范围 11.4V ~ 12.7V）
- 反向电流 Ir：100nA @ 8V（低泄漏）
- 浪涌耗散功率 Pd：500mW（总耗散）
- 稳态阻抗 Zzt：25Ω（影响小信号调节性能）
- 工作结温度：-55℃ ~ +150℃
- 封装：SOD-123（表面贴装）
三、典型电气参数与设计依据
稳压二极管在稳压工作点的最大允许电流 Iz_max 可由 Iz_max ≈ Pd / Vz 估算；对于 12V 等效，Iz_max ≈ 500mW / 12V ≈ 41mA。考虑封装散热及长期可靠性，推荐连续工作电流在 10–20mA 范围以降低结温并保证长期稳定性。小信号阻抗 25Ω 表明在中低电流工作区存在一定的伏差随电流变化，动态调节需配合合适的旁路与滤波。
四、功耗与热管理
SOD-123 封装的热阻较高，应关注结－环境温升。实际电路中务必计算：P = Vz × Iz（近似稳压情况下），并按环境温度和 PCB 散热能力对耗散功率进行额定降额。建议在高环境温度或长期功耗时增加散热铜箔面积或降低工作电流。
五、典型应用场景
- 小功率参考电压源与基准
- 便携式仪表与消费电子的局部稳压
- 保护电路、夹位与电平参考
- 低功耗传感器供电或偏置电路
六、使用建议与注意事项
- 采用串联限流电阻实现稳压，计算需考虑最大浪涌与稳态耗散。
- 在输入电压波动较大时加入输入滤波/旁路电容以改善动态响应。
- 避免长期在 Pd 限值附近工作，推荐留有安全裕量。
- 元件的完整性能及可靠性应以厂家完整数据手册和样品测试为准。
七、封装与订购信息
型号：BZT52C12W
品牌：晶导微电子（Jingdao）
封装：SOD-123（表面贴装）
请在选型与采购时参考晶导微电子的最新数据手册，确认波峰/回流焊工艺兼容性、湿敏等级（MSL）与可靠性测试报告。若需电路参考或热设计计算示例，可提供更详细的负载与环境条件以便给出针对性建议。
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