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Jingdao Microelectronics ES1B
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic ES1B
- Type
- Jingdao Microelectronics
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- ES1B
- Electronic Component
- 1
- Package
- SMA
- Electronic Component
- Fast Recovery / High-Efficiency Diode
- Electronic Component
- 0.12g
- Electronic Component
- 1
- Electronic Component
- BM0230630734
- Current
- 1A
- Diode
- 1
- Current(Ir)
- 5uA@100V
- (Vf)
- 1V@1A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
ES1B 产品概述
一、产品简介
ES1B 是晶导微电子推出的一款独立式快恢复/高效率整流二极管，采用 SMA 封装，适用于中低功率整流和开关电源输出整流。器件在 1A 工作电流下具有较低正向压降与快速反向恢复特性，兼顾效率与开关性能，适合要求体积小、散热可控的功率电路。
二、主要性能与优势
- 低正向压降：Vf = 1.0V @ IF = 1A，降低整流损耗，提高系统效率。
- 低反向漏电流：Ir = 5 μA @ VR = 100V，适合在高压工况下保持低静态损耗。
- 快恢复特性：反向恢复时间 Trr = 35ns，有效降低开关损耗与电磁干扰。
- 寿命与耐热：工作结温范围 -55℃ ~ +150℃（Tj），适应宽温区环境。
- 良好冲击承受力：单次峰值浪涌 Ifsm = 30A，可承受短时浪涌电流。
三、电气参数概要
- 二极管配置：独立式（Discrete）
- 正向压降：Vf = 1.0V @ IF = 1A
- 直流反向耐压：VR = 100V
- 整流电流（平均）：IF(AV) = 1A
- 反向电流：Ir = 5 μA @ VR = 100V
- 反向恢复时间：Trr = 35 ns
- 非重复峰值浪涌电流：Ifsm = 30A
- 工作结温范围：-55℃ ~ +150℃（Tj）
- 封装：SMA（表面贴装）
四、典型应用场景
- 开关电源（SMPS）输出整流
- 适配器与充电器二次整流
- 交流到直流整流桥、功率模块里的保护与整流
- 马达驱动、照明电源等需要快速恢复特性的场合
五、封装与热管理建议
SMA 封装便于自动贴装与无铅回流焊，热阻相对较高，建议在 PCB 布局时：
- 为二极管铜箔留出足够散热面积并与散热地平面连接；
- 在需要更高热能力时并联多只或采用散热片与过孔加强热传导；
- 注意回流焊温度曲线符合器件的热极限，避免过热导致性能下降。
六、使用注意事项
- 长时间满载工作时，应做电流与结温的热余量设计，避免超过 Tj 上限；
- 在高频开关场合，考虑与驱动拓扑匹配以减少开关应力与电磁干扰；
- 存储与焊接遵循一般半导体防潮与回流规范，避免潮湿引发焊接缺陷。
七、结论与选型建议
ES1B（晶导微电子，SMA 封装）以 1A 平均整流能力、1.0V 正向压降与 35ns 快恢复时间，提供在成本、效率与开关性能之间的良好平衡。适用于中小功率电源与整流场景；在更高效率或更高频率应用时，可考虑并联、选用更低 Vf 或更短 Trr 的器件以满足系统需求。若需详细数据表或样片测试建议联系晶导微电子获取完整规格与可靠性数据。
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