Model & package intelligence
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Jingdao Microelectronics US1J
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic US1J
- Type
- Jingdao Microelectronics
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- US1J
- Electronic Component
- 1
- Package
- SMA
- Electronic Component
- Fast Recovery / High-Efficiency Diode
- Electronic Component
- 0.12g
- Electronic Component
- 1
- Electronic Component
- BM0227367059
- Current
- 1A
- Diode
- 1
- Current(Ir)
- 5uA@600V
- (Vf)
- 1.65V@1A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
US1J 快恢复高效率二极管 产品概述
一、主要特性
US1J 为晶导微电子推出的独立式快恢复高效率整流二极管，设计用于开关电源及高频整流场合。典型正向压降低至 1.65V（1A），正向整流电流 1A，反向耐压 600V，反向恢复时间仅 75ns，兼顾低损耗与快速开关性能。
二、典型电气参数
- 型号：US1J（独立式）
- 正向压降（Vf）：1.65V @ IF = 1A
- 直流反向耐压（Vr）：600V
- 直流整流电流（IF）：1A（平均）
- 峰值可重复浪涌电流（Ifsm）：30A
- 反向电流（Ir）：5µA @ 600V
- 反向恢复时间（Trr）：75ns
- 工作结温范围（Tj）：-55℃ ~ +150℃
三、封装与机械特性
US1J 采用 SMA 封装，体积小，便于自动化贴装和波峰/回流焊接。SMA 封装兼顾散热与机械强度，适用于中小功率模块化设计。封装外形利于 PCB 布局与散热铜箔联接。
四、应用场景
US1J 适合以下应用：
- 开关电源（SMPS）二次侧整流
- 功率因数校正（PFC）电路中高压整流
- 电机驱动与逆变器的续流/钳位二极管
- 开关型充电器、LED 驱动电源
- 高压脉冲整流与保护回路
五、热特性与可靠性
工作结温范围宽（-55℃ 至 +150℃），在高温环境下仍能保持稳定性能。低反向漏电和短反向恢复时间有助于降低开关损耗和温升。设计时建议在 PCB 上为二极管预留足够的散热铜箔并考虑环境温度与散热路径，以保证长期可靠性和热余量。
六、使用建议与注意事项
- 在高频率切换应用中，Trr = 75ns 能显著减少反向恢复相关的能量损耗，但在极高 dV/dt 场合仍需评估尖峰电流与浪涌能力。
- 选型时注意峰值浪涌 Ifsm（30A）为非重复值，瞬态浪涌能力强，但不可长期超载。
- 鼓励在 PCB 设计中尽量缩短二极管与相关开关器件之间的走线，减小寄生电感以避免振铃和过压。
- 焊接工艺遵循 SMA 封装规范，回流温度与时间需控制在器件数据手册建议范围内以避免热应力损伤。
US1J 结合了低正向压降、低漏电、快速恢复与较高耐压，是中高压、高效率电源与整流应用的理想选择。欲获取封装图、温度特性曲线与详细电气规格，请参考晶导微电子产品资料或联系技术支持。
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