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Jingdao Microelectronics SS26
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic SS26
- Type
- Jingdao Microelectronics
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- SS26
- Electronic Component
- 1
- Package
- SMA(DO-214AC)
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.119g
- Electronic Component
- 1
- Electronic Component
- BM0228055888
- Current
- 2A
- Diode
- 1
- (Vf)
- 700mV@2A
- Electronic Component
- 55℃~+125℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage Rating(Vr)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SS26 肖特基二极管（晶导微电子）产品概述
一、产品简介
SS26 为晶导微电子出品的一款功率肖特基整流二极管，封装为 SMA（DO-214AC），额定整流电流 2A，直流反向耐压 60V，典型正向压降 700mV（在 2A 条件下）。器件属于低正向压降、响应快速的肖特基结构，适用于开关电源、降压整流及反向保护等场合。
二、主要技术参数
- 型号：SS26（晶导微电子）
- 封装：SMA（DO-214AC）
- 额定整流电流：2A
- 直流反向耐压（Vr）：60V
- 正向压降（Vf）：约 0.7V @ 2A
- 非重复峰值浪涌电流（Ifsm）：50A
- 工作结温范围：-55℃ ~ +125℃
（以上为核心参数，使用时建议结合具体应用对热阻与退化做适当余量评估。）
三、特性与优势
- 低正向压降：在中等电流下（2A 级）具有明显比普通硅整流二极管更小的压降，可降低功率损耗与热量生成，提升系统效率。
- 快速恢复：肖特基结构无显著反向恢复时间，适合高频开关应用，可减少开关损耗与电磁干扰。
- 抗浪涌能力：50A 非重复峰值浪涌电流能承受短时启动或故障瞬态，对输出整流与保护场合有较好裕量。
- 宽温度范围：-55℃ 至 +125℃ 的工作结温满足工业级环境要求。
四、典型应用场景
- 开关电源输出整流（DC-DC、AC-DC）
- 电池充放电路径与反接保护
- 车载电子（需确认温度与震动等级）
- 高频开关整流、降压稳压模块的自由轮回路
五、封装与热管理
SMA（DO-214AC）为常见表面贴装封装，适合自动贴装与回流焊。尽管器件额定整流电流为 2A，实际长期工作时应考虑 PCB 散热（增加铜箔面积、散热过孔）与器件结温升高带来的额外损耗。建议：
- 在高电流或高环境温度下采用 PCB 温度管理（散热铜箔、导热层）。
- 对于脉冲或浪涌场合留出足够的热与电气裕量。
六、选型与使用注意事项
- 留有电压裕度：在可能出现尖峰电压或反向过压的系统中，建议选择比实际最大反向电压更高的器件或并用浪涌抑制措施。
- 并联使用须谨慎：为分担更大电流可并联器件，但需匹配正向特性并做好电流均衡（阻抗匹配、热均匀）。
- 焊接与可靠性：遵循回流焊温度曲线与湿敏等级要求，避免过热导致器件封装或内部连接损伤。
- 参考整机测试：在关键应用（汽车、医疗、电源）中，建议在整机环境下进行热升、寿命与冲击试验验证。
本概述基于器件核心参数与典型应用经验提供要点说明，具体电气、热特性与可靠性数据请参阅晶导微电子正式数据手册以做最终设计与验证。
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