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Jingdao Microelectronics P6SMB6.8A
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic P6SMB6.8A
- Type
- Jingdao Microelectronics
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- P6SMB6.8A
- Electronic Component
- 1
- Package
- SMB
- Type
- TVS
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.2g
- Electronic Component
- 1
- Cj- Capacitor
- 390pF
- Electronic Component
- BM0228061668
- Operating Temperature
- 65℃~+150℃
- Voltage
- 10.5V
- Current(Ir)
- 1mA
- Voltage(VBR)
- 7.14V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
P6SMB6.8A 产品概述
一、产品简介
P6SMB6.8A 是晶导微电子推出的一款瞬态电压抑制二极管（TVS），采用SMB（DO-214AA）封装，专为低压电源及信号线的浪涌和静电放电保护设计。器件工作温度范围宽（-65℃ 至 +150℃），在 10/1000μs 浪涌条件下可提供高达 600W 的峰值脉冲功率能力，适用于工业、通信、汽车及消费类电子等场景的过压保护需求。
二、主要电气参数
- 反向截止电压（Vrwm）：5.8 V
- 击穿电压（Vbr）：7.14 V
- 钳位电压（Vc）典型值：10.5 V
- 峰值脉冲电流（Ipp）：58.1 A @ 10/1000 μs
- 峰值脉冲功率（Ppp）：600 W @ 10/1000 μs
- 反向漏电流（Ir）：1 mA
- 结电容（Cj）：390 pF
- 工作温度：-65℃ ~ +150℃
这些参数表明该器件在低工作电压下能迅速进入钳位状态，限制后端电路承受的过电压幅值，同时具备较高的能量吸收能力。
三、典型应用场景
- 电源输入端过压和浪涌保护（小型电源模块、适配器输入）
- 通信接口与数据线防护（RS-485、CAN、UART 等对高速差分或单端信号有一定容忍）
- 工业控制器与传感器节点的瞬态浪涌抑制
- 汽车电子（对低压电源总线及辅助线路的保护）
- 消费类电子产品的外部接口与充电线路防护
注意：由于结电容较大（390 pF），在高频射频或极高速信号路径中使用时需评估对信号完整性的影响。
四、选型与使用建议
- 若系统工作电压接近或略低于 Vrwm（5.8 V）时，P6SMB6.8A 能提供有效保护；若系统常态电压高于 Vrwm，应选择更高 Vrwm 的型号。
- 钳位电压 10.5 V 是在指定脉冲条件下的典型值，设计时应考虑后端器件对该电压的耐受能力。
- 对于对信号带宽和失真敏感的线路（如高速差分对、RF），需注意 390 pF 的结电容可能引入带宽限制或反射，应评估是否采用低容型 TVS 或将 TVS 放置在非敏感位置。
- PCB 布局建议将 TVS 尽可能靠近受保护端口接地，短且宽的接地回流路径可降低钳位电压和提高防护效果。
五、封装与可靠性
- 封装：SMB（DO-214AA），便于自动贴装与回流焊接。
- 温度范围宽，适应严苛环境。
- 在焊接工艺上建议遵循厂家回流曲线，避免过热造成器件性能退化；储存与安装时注意防潮、防静电措施。
六、典型选型对比要点
- 能量吸收能力（Ppp）与峰值脉冲电流（Ipp）决定对大浪涌的承载能力；本型号适合中大能量脉冲抑制。
- 反向漏电流与钳位电压共同决定静态耗散与保护后残压，应依据系统功耗预算和被保护器件耐压选择。
- 结电容影响高速信号，应在信号完整性和保护能力之间权衡。
如需在具体电路中替换或并联使用，请提供电源等级、最大允许残压、预期浪涌波形等信息，以便给出更精确的选型和布局建议。
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