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Jingdao Microelectronics DS34W
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic DS34W
- Type
- Jingdao Microelectronics
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- DS34W
- Electronic Component
- 1
- Package
- SOD-123F
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.032g
- Electronic Component
- 1
- Electronic Component
- BM0228055873
- Current
- 3A
- Diode
- 1
- Current(Ir)
- 500uA@40V
- (Vf)
- 550mV@3A
- Electronic Component
- 55℃~+125℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
DS34W 产品概述
一、产品简介
DS34W 为晶导微电子推出的一款功率肖特基整流二极管，封装为 SOD-123F，适用于中低压、高效率电源整流与功率路径保护场合。该器件具有较低的正向压降和较高的脉冲浪涌承受能力，适合对效率和热量管理有一定要求的消费电子、通信与工业控制应用。
二、主要参数
- 正向压降 (Vf)：550 mV @ 3 A
- 直流反向耐压 (Vr)：40 V
- 最大整流电流 (If)：3 A（连续）
- 反向电流 (Ir)：500 μA @ 40 V
- 工作结温范围：-55 ℃ ～ +125 ℃
- 非重复峰值浪涌电流 (Ifsm)：80 A（非重复）
- 封装：SOD-123F
- 品牌：晶导微电子
三、主要特点
- 低正向压降：在大电流条件下 Vf ≈ 0.55 V，可显著降低整流损耗，提高电源效率。
- 适用中等电压场景：40 V 的反向耐压适配常见 12 V、24 V 供电系统以及低压 DC-DC 输出整流。
- 较强的浪涌承受能力：80 A 非重复峰值浪涌，适合启动时的瞬态冲击或短时负载突增。
- 小型封装：SOD-123F 兼顾体积与组装密度，适合表面贴装工艺。
四、典型应用
- 开关电源输出整流与续流二极管
- 电源路径/反接保护（对反向漏电流要求不高的场合）
- 车载电子（24 V 较低电压段）、电池管理与充电系统
- 通信设备与消费类电子中的低压功率整流
五、热与电气使用建议
- 功率损耗示例：在 3 A 条件下 P = Vf × I ≈ 0.55 V × 3 A = 1.65 W，SOD-123F 封装散热能力有限，应通过 PCB 大铜箔区域（热沉）来降低结温。
- 反向泄漏随温度上升显著增加，需在高温工作环境中评估 Ir 对系统待机或漏电要求的影响。
- 对于频繁的脉冲或高平均功率工作，应适当降额使用或选用更大散热能力的封装。
- 非重复浪涌 80 A 可应对瞬时冲击，但不可作为连续过载使用；浪涌时长与能量需参考应用场景并留有裕量。
六、可靠性与选型提示
- 若系统对漏电流敏感（如高阻抗检测、超低功耗待机），应考虑漏电更低的器件或增加并联/电路补偿措施。
- 若工作电流长期接近 3 A，应优先评估 PCB 热设计与环境温度，必要时选择更大封装或并联多颗器件。
- 在 24 V 以上或更苛刻电压应力场合，建议选择更高 Vr 等级的肖特基器件。
晶导微电子 DS34W 在小体积与中等功率需求中提供了良好的效率与浪涌耐受能力，适合追求成本与性能平衡的多种电源与保护应用。选择时请结合实际热设计与漏电容忍度进行评估。
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