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Jingdao Microelectronics ES1GW
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic ES1GW
- Type
- Jingdao Microelectronics
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- ES1GW
- Electronic Component
- 1
- Package
- SOD-123F
- Electronic Component
- Fast Recovery / High-Efficiency Diode
- Electronic Component
- 0.032g
- Electronic Component
- 1
- Electronic Component
- BM0228055862
- Current
- 1A
- Diode
- 1
- Current(Ir)
- 5uA@400V
- (Vf)
- 1.25V@1A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
ES1GW 产品概述 — 晶导微电子
一、产品简介
ES1GW 为晶导微电子推出的独立式快恢复/高效率整流二极管，封装为 SOD-123F，适用于中低功率开关电源与整流场合。器件设计兼顾低正向压降与较快的反向恢复特性，能在提高整机效率的同时降低开关损耗与电磁干扰（EMI）。
二、主要电气参数
- 型号：ES1GW
- 封装：SOD-123F（独立式）
- 直流整流电流：1A
- 非重复峰值浪涌电流（Ifsm）：30A
- 直流反向耐压（Vr）：400V
- 正向压降（Vf）：1.25V @ 1A
- 反向电流（Ir）：5 µA @ 400V
- 反向恢复时间（Trr）：35 ns
- 工作结温范围：-55 ℃ ~ +150 ℃（Tj）
三、产品特点
- 低正向压降：1.25V（1A）设计，有助于降低正向导通损耗，适用于效率敏感的电源设计。
- 快恢复特性：Trr 约 35ns，显著减小开关瞬态损耗和重复开关过程中的能量回收，从而控制 EMI 水平。
- 高耐压性能：400V 反向耐压，满足较高电压总线和反向冲击场合的应用需求。
- 低反向漏流：在 400V 时仅 5 µA，有利于待机功耗及高温环境下的可靠运行。
- 抗浪涌能力：30A 峰值浪涌电流，提升器件在启动、过载或突发脉冲下的生存能力。
- 小型封装：SOD-123F 体积小、便于自动贴装与大批量生产，适合空间受限的电路板布局。
四、典型应用
- 开关电源（SMPS）输出整流与续流二极管
- 电源适配器、充电器的高效率整流环节
- 逆变器与功率变换器的小功率回路
- 蓄电池充放电保护、极性保护与防反接电路
- 浪涌抑制与快速恢复整流场合
五、封装与布局建议
SOD-123F 小封装对散热有限，建议在 PCB 上为器件的焊盘处增加铜箔面积或热铜层以改善散热。对于持续 1A 工作点，需考虑正向压降导致的功耗（P = Vf × I），并在系统设计中留有安全裕度以保证结温不超过额定范围（Tj ≤ +150 ℃）。
六、可靠性与使用注意
- 器件允许的工作结温范围宽（-55 ℃ 至 +150 ℃），适合较苛刻的环境，但长期高温运行会影响寿命，建议合理散热与热设计。
- 在波峰焊或回流焊过程中，请遵循封装材料与工艺的温度极限；若需多次回流，应验证热循环可靠性。
- 对于含有较强瞬态或高 dv/dt 的应用，建议配合合适的缓冲网络（如 RC 抑制）以进一步降低系统干扰。
七、选型建议
ES1GW 在需要 400V 耐压、1A 连续整流且要求较快恢复时间的场合为性价比高的选择。若系统要求更低的正向压降或更高的连续电流，建议选用更大封装或肖特基器件；若需更短的反向恢复时间，应考虑专用快恢复或超快恢复系列器件。
欲获取完整电气特性曲线、封装尺寸和建议焊接工艺，请参阅晶导微电子 ES1GW 产品数据手册或联系当地技术支持。
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