WMSIC Electronic Components

Jingdao Microelectronics US5MC

ModelUS5MC
PackageSMC
BrandElectronic
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Electronic US5MC
Type
Jingdao Microelectronics
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic
Electronic Component
US5MC
Electronic Component
1
Package
SMC
Electronic Component
Fast Recovery / High-Efficiency Diode
Electronic Component
0.381g
Electronic Component
1
Electronic Component
BM0227663750
Current
5A
Diode
1
Current(Ir)
5uA@1kV
(Vf)
1.65V@5A
Electronic Component
55℃~+150℃
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

US5MC 快恢复/高效率二极管 — 产品概述

一、产品简介

US5MC 是晶导微电子推出的一款独立式快恢复/高效率整流二极管,封装为 SMC(DO-214AB)。该器件面向高电压、高电流整流与续流场合,兼顾较低正向压降与快速反向恢复特性,适用于开关电源、功率因数校正(PFC)、逆变器与工业整流等应用。

二、主要电气参数

  • 型号:US5MC
  • 封装:SMC(独立式)
  • 额定整流电流(IF):5 A(整流)
  • 直流反向耐压(VR):1000 V
  • 正向压降(Vf):1.65 V @ 5 A
  • 反向电流(Ir):5 μA @ 1 kV(室温)
  • 反向恢复时间(Trr):75 ns(典型)
  • 工作结温范围(Tj):-55 ℃ ~ +150 ℃

三、封装与散热注意

SMC 封装便于手工焊接和波峰/回流生产,适合通过大铜箔实现散热。设计电路板时应:

  • 在焊盘下方和周围增加铜箔面积并与散热平面热连接,以降低结-壳与结-环境热阻。
  • 考虑正向压降造成的功耗:在 5 A 条件下 Pf = Vf × IF ≈ 1.65 V × 5 A = 8.25 W,必须依据实际散热条件评估结温上升并适当降额。
  • 高温下反向电流会显著增加,电路板需为高温工况预留安全裕量。具体热阻参数请参照完整数据手册(RθJA、RθJC)。

四、典型应用场景

  • 开关电源(SMPS)次级整流与续流二极管
  • 功率因数校正(PFC)整流桥与高压续流回路
  • 太阳能逆变器、高压充电设备与工控电源
  • 需要兼顾高耐压与较快恢复时间的整流场合

五、设计与使用建议

  • 反向恢复(Trr)为 75 ns,能够减少开关变换时的能量损耗与应力,但在高频或高 dv/dt 场合仍建议配合 RC 吸收、限流电阻或 TVS 限压器,以抑制尖峰电压与 EMI。
  • 对于连续大电流或高结温工况,应进行降额设计并在布局上尽量缩短信号回路与功率回路的寄生电感,降低反向恢复产生的振铃与损耗。
  • 并联使用时需注意电流均分问题,推荐采用适当的平衡和散热方案,或优先选择额定更高单只器件以避免并联复杂性。
  • 在高压侧使用时注意耐压裕量与浪涌电流能力,必要时进行浪涌测试与老化验证。

六、可靠性与测试

器件已面向工业级工作温度设计,适合长期运行。建议在产品导入阶段,进行必要的热循环、热稳态、反向耐压与冲击试验,验证在目标系统中的实际表现。对关键应用可向晶导微电子索取详细数据手册、可靠性试验报告与样品验证数据。

七、总结

US5MC 在 1 kV 耐压与 5 A 整流能力之间提供了良好的性能平衡:较低的 1.65 V 正向压降和 75 ns 的反向恢复时间,有助于提高整机效率并降低开关损耗。SMC 封装便于散热与组装,适用于各类高压整流与续流场合。欲获得完整参数、管脚、PCB 布局建议与力学尺寸,请联系晶导微电子或参阅其正式数据手册。

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