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Jingdao Microelectronics SS510C
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic SS510C
- Type
- Jingdao Microelectronics
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- SS510C
- Electronic Component
- 1
- Package
- SMC(DO-214AB)
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.401g
- Electronic Component
- 1
- Electronic Component
- BM0230630455
- Current
- 5A
- Diode
- Electronic Component
- Current(Ir)
- 1mA@100V
- (Vf)
- 850mV@5A
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage Rating(Vr)
- 100V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SS510C（SMC 肖特基二极管）产品概述
一、产品简介
SS510C 是晶导微电子推出的一款独立式肖特基整流二极管，封装为 SMC (DO-214AB)。肖特基结构使其具有低正向压降和极短的恢复时间，适合中大电流整流和开关电源中的回收、续流保护等应用。器件极性清晰，封装耐处理，适用于工业级电源设计。
二、主要电气参数
- 器件型号：SS510C
- 封装：SMC (DO-214AB)，独立式（单颗）
- 整流电流（IF）：5A（连续）
- 正向压降（Vf）：0.85 V @ IF = 5A
- 直流反向耐压（Vr）：100 V
- 反向电流（Ir）：1 mA @ VR = 100 V
以上参数为典型/标称值，具体设计请参考完整数据手册并考虑温度对漏电和正向压降的影响。
三、性能特点与使用要点
- 低正向压降：0.85 V 在 5A 时可显著降低整流损耗，相比普通 PN 二极管能减小功耗和升温。
- 反向漏电：在 100 V 时反向电流约为 1 mA，肖特基二极管的漏电随温度上升敏感，需注意高温工作下的泄漏电流影响。
- 快速恢复：肖特基结构几乎无显著反向恢复，适合高频开关场合做续流或整流。
- 热管理要求：5A 运行下正向耗散约为 4.25 W（P = IF × Vf），须做好 PCB 铜箔散热或加散热片以保持结温在安全范围内。
- 极限参数：请遵循最大结温与冲击电流规范，避免长期在极限条件下工作以延长寿命。
四、典型应用场景
- 开关电源（SMPS）次级整流
- 电机驱动与续流二极管
- 车载电源与电池保护（需考虑温度与漏电特性）
- 电源 OR-ing 与反向保护
- 太阳能逆变器辅助整流及防反灌
五、封装与 PCB 布局建议
- SMC 封装面积与导热能力较好，建议在器件下方和相邻铜区留出大面积散热铜箔，并结合过孔（via）下穿至内部或反面大面积铜箔进行热传导。
- 引脚走线最短且宽，降低寄生阻抗与热阻；在高频应用旁路电容靠近二极管放置以抑制尖峰。
- 在布局时注意器件方向标识（阴极带），确保电路连接与极性正确。
六、选型与可靠性建议
- 若工作电压或温度更高，应评估更高 Vr 或更低 Ir 的器件；若对漏电敏感（小电流系统），注意肖特基的温漂特性。
- 设计时考虑热降与平均功率损耗的裕量，并按照典型波形验证浪涌与峰值电流承受能力。
- 采购与检验建议从正规渠道获取晶导微电子原装件，参考完整数据手册进行温度、寿命与封装尺寸核对。
如需进一步的热阻、最大结温、冲击电流或封装尺寸图，请提供要求，我可依据器件手册给出更详细的设计建议。
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