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Jingdao Microelectronics ES1G
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic ES1G
- Type
- Jingdao Microelectronics
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- ES1G
- Electronic Component
- 1
- Package
- SMA
- Electronic Component
- Fast Recovery / High-Efficiency Diode
- Electronic Component
- 0.12g
- Electronic Component
- 1
- Electronic Component
- BM0224625458
- Current
- 1A
- Diode
- 1
- Current(Ir)
- 5uA@400V
- (Vf)
- 1.25V@1A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
ES1G 快恢复/高效率二极管产品概述
概要
ES1G 是一种由晶导微电子生产的快恢复/高效率二极管，适用于各种高频和高效率应用。该产品以其优秀的性能参数和广泛的适用场景而受到广泛欢迎。
基础参数
- 二极管配置: 独立式
- 反向恢复时间 (trr): 35 ns
- 反向电流 (Ir): 5 μA @ 400 V
- 商品分类: 快恢复/高效率二极管
- 工作温度: -55℃ ~ +150℃ @(Tj)
- 整流电流: 1 A
- 正向压降 (Vf): 1.25 V @ 1 A
- 直流反向耐压 (Vr): 400 V
封装
ES1G 采用 SMA 封装，这是一种小型化的封装形式，适合于空间有限但要求高性能的电子设备。SMA 封装不仅提高了设备的集成度，还降低了整体体积和重量。
性能特点
快恢复时间
ES1G 的反向恢复时间仅为 35 ns，这使得它特别适合于高频应用，如开关电源、逆变器和高频滤波器等场景。快速的恢复时间可以显著减少开关损耗，提高系统的整体效率。
低正向压降
该二极管的正向压降为 1.25 V @ 1 A，这是一個相对较低的值，意味着在正常工作条件下，二极管会消耗较少的能量，从而提高系统的总体效率和可靠性。
高反向耐压
ES1G 具有 400 V 的直流反向耐压，这使得它能够在高压环境中稳定运行，适用于各种需要高耐压能力的应用场景。
宽工作温度范围
该产品的工作温度范围从 -55℃ 到 +150℃，这使得它能够在极端环境下保持稳定性能，广泛应用于工业控制、汽车电子、航空航天等领域。
低反向漏电流
在 400 V 的条件下，反向漏电流仅为 5 μA，这进一步确保了设备在长时间运行中的稳定性和可靠性。
应用场景
开关电源
由于其快速恢复时间和低正向压降，ES1G 非常适合用于开关电源中的整流和保护环节，可以显著提高电源的效率和可靠性。
逆变器
在逆变器应用中，ES1G 的高频性能和低损耗特性使其成为理想的选择，能够提高逆变器的总体效率和稳定性。
高频滤波器
快速恢复时间使得 ES1G 可以有效地处理高频信号，减少高频噪声对系统的影响，提高滤波器的性能。
工业控制和汽车电子
宽工作温度范围和高耐压能力使得 ES1G 适用于各种工业控制设备和汽车电子系统，确保设备在恶劣环境下也能稳定运行。
总结
ES1G 快恢复/高效率二极管是晶导微电子的一款高性能产品，通过其卓越的参数和广泛的适用场景，成为众多电子工程师和设计师的首选。无论是在开关电源、逆变器、高频滤波器还是工业控制和汽车电子领域，ES1G 都能提供出色的性能和可靠性，帮助用户实现更高效、更可靠的电子系统。
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