WMSIC Electronic Components

Jingdao Microelectronics MMBTA42

ModelMMBTA42
PackageSOT-23
BrandElectronic
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Option 131493

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Electronic MMBTA42
Type
Jingdao Microelectronics
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic
Electronic Component
MMBTA42
Electronic Component
1
Package
SOT-23
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.032g
Electronic Component
1
Electronic Component
BM0265390936
Operating Temperature
55℃~+150℃
Transistor Type
NPN
Frequency(f T)
50MHz
Power Dissipation(Pd)
350mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MMBTA42 三极管(NPN型BJT)产品概述

一、基本信息

MMBTA42是一款由晶导微电子生产的NPN型双极结型晶体管(BJT),采用SOT-23贴片封装,属于中高压小功率器件范畴。其核心参数覆盖300V电压、300mA电流及350mW功率,可适配信号放大、低速开关控制、电源辅助电路等多种电子场景,是消费电子、工业控制、汽车电子等领域的通用型器件。

二、核心电性能参数

MMBTA42的参数设计兼顾电压耐受、电流驱动、信号性能,具体核心指标及意义如下:

  1. 功率与电流能力:耗散功率(Pd)为350mW,集电极最大持续电流(Ic)300mA,满足小负载驱动(如LED、小型继电器)及低功耗电路的功率需求;
  2. 电压特性:集射极击穿电压(Vceo)达300V,远高于普通小功率管(多为100-200V),可适配中高压电源环境(如120V/220V交流降压后的直流电路);射基极击穿电压(Vebo)5V,避免基极-发射极过压损坏;
  3. 放大与频率性能:直流电流增益(hFE)60(测试条件:Ic=1mA、Vce=10V),保证小信号放大的线性度;特征频率(fT)50MHz,支持50MHz以下的中低频信号处理(如音频前置放大、射频调制解调);
  4. 饱和与截止特性:集射极饱和电压(VCE(sat))仅200mV,开关导通时压降低、功耗小,适合高效开关应用;集电极截止电流(Icbo)250nA,漏电流极低,信号放大时噪声小、输出纯净。

三、封装形式与典型应用

1. 封装特点

采用SOT-23贴片封装,体积小巧(约2.9×1.6×1.1mm),适配高密度PCB设计,焊接兼容性强(可用于回流焊、波峰焊),适合批量自动化生产。

2. 典型应用场景

  • 信号放大电路:音频/射频前置放大、传感器信号调理(如温度、压力传感器的弱信号放大);
  • 低速开关控制:LED驱动、小型继电器线圈驱动、电源过流保护开关;
  • 电源辅助电路:高压电源的反馈控制、电压检测电路、EMI滤波辅助;
  • 极端环境应用:工业控制模块(-55℃~+150℃宽温)、汽车电子辅助电路(低温启动场景)。

四.可靠性与环境适应性

MMBTA42的可靠性设计满足工业级应用要求:

  • 宽温范围:工作温度覆盖-55℃~+150℃,可适应极寒(如北方户外设备)、高温(如电源模块内部)环境,无需额外温度补偿;
  • 低漏电流稳定性:Icbo=250nA的低漏电流特性,长期工作下信号失真小,电路一致性好;
  • 击穿电压裕量:300V的Vceo预留足够裕量,避免电路过压时损坏,提升系统可靠性。

五.品牌与选型优势

作为晶导微电子的成熟产品,MMBTA42具备以下选型优势:

  1. 国产可靠替代:性能参数与进口同型号(如ON Semiconductor MMBTA42)兼容,性价比更高,供货稳定;
  2. 参数一致性:经过严格的生产测试,hFE、VCE(sat)等关键参数离散性小,适合批量应用;
  3. 通用兼容性:SOT-23封装为行业标准,易与其他器件协同设计,降低PCB改版成本。

综上,MMBTA42是一款高性价比、高可靠性的中高压小功率NPN管,可覆盖多领域的通用电路需求,是电子设计中替代进口、降低成本的优选器件。

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