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Jingdao Microelectronics SMBJ10A
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic SMBJ10A
- Type
- Jingdao Microelectronics
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- SMBJ10A
- Electronic Component
- 1
- Package
- SMB
- Type
- TVS
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.167g
- Electronic Component
- 1
- Cj- Capacitor
- 390pF
- Electronic Component
- BM0264858929
- Operating Temperature
- 65℃~+150℃
- Voltage
- 17V
- Current(Ir)
- 5uA
- Voltage(VBR)
- 12.3V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SMBJ10A TVS二极管产品概述
一、产品基本信息
SMBJ10A是晶导微电子推出的瞬态抑制二极管（TVS），采用SMB封装（国际标准DO-214AA），核心功能为电路过压浪涌防护——可快速响应瞬态电压尖峰，将其钳位至安全范围，避免后端敏感元器件（如芯片、电容）因过压损坏。该器件设计紧凑，适配表面贴装工艺，广泛用于小型化电子设备的防护场景。
二、核心电性能参数
SMBJ10A的关键参数明确，支撑不同场景的防护设计，核心参数如下：
- 反向截止电压（Vrwm）：10V
器件反向截止状态下可长期承受的最大工作电压，静态时不影响电路正常运行。 - 击穿电压（Vbr）：典型值12.3V
反向击穿的起始电压，是器件进入钳位防护状态的阈值。 - 钳位电压（Vc）：17V（测试条件：10/1000μs脉冲波形）
承受浪涌脉冲时，将电压钳位至17V以内，保护后端电路不受过压冲击。 - 脉冲耐受能力：
- 峰值脉冲电流（Ipp）：35.3A（10/1000μs）；
- 峰值脉冲功率（Ppp）：600W（10/1000μs）；
可有效应对静电放电（ESD）、雷电感应浪涌等常见瞬态干扰。
- 反向漏电流（Ir）：5μA（典型值）
静态漏电流极小，对电路功耗影响可忽略。 - 结电容（Cj）：390pF
反映高频特性，适合中低频电路（如电源端口、低速数据接口）防护，高频场景需结合需求评估。
三、封装与物理特性
SMBJ10A采用SMB表面贴装封装，具备以下优势：
- 尺寸紧凑：适配高密度PCB布局，满足手机、平板等小型化设备的设计需求；
- 工艺兼容：支持自动化贴装，提升生产效率；
- 宽温范围：工作温度为-65℃~+150℃，可稳定工作于极端环境（如工业高温、低温户外设备）。
四、典型应用场景
SMBJ10A的参数特性使其适用于多类电子设备的防护：
- 消费电子：手机、平板、笔记本的电源输入、USB接口、音频接口，防护静电及电源浪涌；
- 工业控制：PLC模块、传感器接口、电机驱动电路，应对工业电磁干扰（EMI）及浪涌；
- 通信设备：路由器、交换机、光模块的电源/数据接口，保护通信芯片；
- 车载辅助电路：车载充电器、显示屏辅助电路，宽温特性适配汽车环境温度变化。
五、可靠性与应用注意事项
- 重复耐受能力：可多次承受额定脉冲功率，适合长期处于浪涌风险的场景；
- 低功耗：反向漏电流仅5μA，不增加电路额外功耗；
- 高频适配性：结电容390pF，若用于射频接口需选择低结电容TVS型号，避免信号衰减。
综上，SMBJ10A以紧凑封装、宽温特性及明确的防护参数，成为中低频电路过压防护的实用选择，适配多类电子设备的可靠性设计需求。
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