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Jingdao Microelectronics BZT52C6V8S
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic BZT52C6V8S
- Type
- Jingdao Microelectronics
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- BZT52C6V8S
- Electronic Component
- 1
- Package
- SOD-323
- Electronic Component
- Zener Diode
- Electronic Component
- 0.028g
- Electronic Component
- 1
- (Zzt)
- 15Ω
- Electronic Component
- BM0230630722
- Diode
- 1
- Current(Ir)
- 2uA@4V
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- 6.4V~7.2V
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BZT52C6V8S 产品概述
一、产品简介
BZT52C6V8S 为晶导微电子推出的独立式稳压二极管，标称稳压值 6.8V（规格范围 6.4V~7.2V），常用于低功耗电压稳压与钳位保护。器件为 SOD-323 小封装，适合表面贴装应用，体积小、布局灵活，适用便携与空间受限的电子设备。
二、主要特性
- 标称稳压：6.8V（范围 6.4V ~ 7.2V）
- 反向泄漏电流：Ir = 2 μA @ 4V（典型）
- 静态耗散功率：Pd = 200 mW（环境 25°C 时）
- 动态阻抗：Zzt = 15 Ω（表征稳压时的动态电阻）
- 封装：SOD-323，适合自动贴装生产
三、电气参数与设计要点
- 最大稳压电流估算：在 Pd = 200 mW 下，理论最大电流 Imax ≈ Pd / Vz ≈ 200 mW / 6.8 V ≈ 29 mA。长期运行应取显著裕量，通常建议工作电流远低于此值以保证可靠性。
- 动态阻抗影响稳压精度：Zzt = 15 Ω 意味着电流每变化 1 mA，稳压点约变化 15 mV，设计时需考虑电源电流波动对输出电压的影响。
- 反向泄漏：低电压时的漏电会影响超低功耗电路，设计偏置和待机时需考虑 2 μA 级别的流失。
四、典型应用场景
- 小功率参考电压源与基准稳压
- 输入浪涌或反向电压钳位保护
- 通信模块、传感器前端的偏置稳定
- 便携式与低功耗电子产品的局部稳压
五、热与功率管理
SOD-323 属于小体积封装，散热能力有限。实际使用中应：
- 避免长时间工作在 Pd 限值附近；推荐连续工作电流控制在 Imax 的 30%~50% 范围内。
- 布板时增加铜箔散热区或与地/电源大铜面相连以降低结温。
- 在高环境温度下按器件数据手册进行功率降额。
六、封装与装配建议
SOD-323 小封装适合自动贴装与回流焊工艺。建议按照晶导微电子提供的回流曲线及湿敏等级（若有）进行焊接与保管，避免过热或长时间潮湿环境存放。
七、选型与使用建议
- 若电源与负载电流波动较大，考虑选择低阻抗（Zzt 更小）或更高功率器件以提高稳压性能。
- 在做电阻限流计算时，先以最大允许稳压功率计算允许最大电流，再留裕量：R = (Vin - Vz) / Iset。
- 对于超低待机功耗应用，关注反向泄漏对总待机电流的影响，必要时采用断电控制或更低漏电器件。
八、典型电路说明
典型用法为将 BZT52C6V8S 反向并联于负载作为稳压元件，串联限流电阻用于限制通过稳压二极管的电流；同时可并联电容以改善瞬态响应与稳定性。具体参数与布局应参考实际工作电压、负载条件及热设计。
如需更详细的电气曲线、回流焊工艺参数或可靠性数据，建议参考晶导微电子正式数据手册或向供应商索取样片验证设计。
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