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Jingdao Microelectronics MBR10150CG
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic MBR10150CG
- Type
- Jingdao Microelectronics
- Minimum package
- 800 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- MBR10150CG
- Electronic Component
- 1
- Package
- TO-263
- Electronic Component
- Schottky Diode
- Electronic Component
- 1.855g
- Electronic Component
- 1
- Electronic Component
- BM0263415498
- Current
- 10A
- Diode
- 1
- (Vf)
- 900mV@5A
- Electronic Component
- 55℃~+175℃
- Electronic Component
- Electronic Component
- Electronic Component
- 800
- Voltage Rating(Vr)
- 150V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MBR10150CG 产品概述
一、概述
MBR10150CG 是晶导微电子面向中高压整流和开关电源应用推出的一款功率肖特基二极管（TO-263 封装）。器件特点为在较大电流密度下保持较低正向压降，耐高结温设计适合工业级、汽车和通信等要求高可靠性的场合。
二、主要电气参数
- 正向压降 Vf：0.90 V @ IF = 5 A（典型测试工况），在大电流时能显著降低导通损耗。
- 直流反向耐压 Vr：150 V，适用于高压整流与反向耐压要求较高的电源拓扑。
- 非重复峰值浪涌电流 Ifsm：100 A（单次峰值浪涌），用于瞬态冲击电流吸收或启动瞬态情况。
- 工作结温范围：-55 ℃ ~ +175 ℃，满足宽温度工作环境下的长期可靠性。
- 反向电流 Ir：用户提供值为 100 A，明显不符合常规定义（反向电流通常为 μA~mA 级）。建议在正式设计前向厂家确认该项的正确单位与典型值，以免误判器件适用性。
三、封装与热性能
封装为 TO-263（D2PAK 类似），具有良好的散热能力和便于自动贴片焊接的特性。该封装适合在有散热铜箔或散热片的 PCB 上工作，可通过增加底部焊盘和加厚铜层降低结温上升，提高连续导通电流能力。
四、典型应用场景
- 开关电源（SMPS）输出整流与续流二极管。
- 反激/正激/同步整流电路。
- 逆变器与电机驱动的续流保护。
- 汽车电子、高可靠性电源模块的整流及浪涌吸收。
五、选型与注意事项
- 根据实际平均电流与散热条件评估结温上升，TO-263 封装需配合合理铜箔面积与热通道设计。
- 注意 Ifsm 仅用于单次浪涌，不可作为重复循环条件下的安全指标。
- 由于用户提供的反向电流值可能有误，应以厂方正式数据手册为准；反向漏电随温度上升成倍增长，对高温工况需格外关注。
- 正向压降测试为 5 A 条件下的参考值，短路或更高脉冲电流下 Vf 会升高，应留有裕量。
六、焊接与储存建议
- 推荐回流焊工艺参数参照晶导微电子手册，避免过高峰值温度与过长加热时间以免影响封装可靠性。
- 储存应防潮，未焊接器件建议在规定时间内回流，长期储存需按湿敏等级（MSL）管理。
七、常见测试与验证
- 推荐在实际 PCB 上做温升试验（不同铜厚、焊盘面积）以确认连续载流能力。
- 对于电源级设计，建议做浪涌吸收与热循环测试，验证 Ifsm 与结温极限下的安全裕度。
- 对反向漏电敏感的应用，应在高温（例如 125 ℃）下测量 Ir 并依据结果选型或并联/散热处理。
结语：MBR10150CG 以其 150 V 耐压、0.9 V@5A 的低压降及 TO-263 散热优势，适合中高功率整流场合。由于所给“反向电流”数值异常，正式设计前请务必下载并核对晶导微电子的完整器件数据手册或直接咨询厂家以确认关键参数。
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