WMSIC Electronic Components

JSMSEMI MMBT3904

ModelMMBT3904
PackageSOT-23
BrandJSMSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
JSMSEMI MMBT3904
Type
JSMSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
JSMSEMI
Electronic Component
MMBT3904
Electronic Component
1
Package
SOT-23
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.031g
Electronic Component
1
Electronic Component
BM0227639670
Operating Temperature
55℃~+150℃
Transistor Type
NPN
Frequency(f T)
300MHz
Power Dissipation(Pd)
250mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MMBT3904(JSMSEMI)产品概述

一、概述

MMBT3904(JSMSEMI 出品)为通用小信号 NPN 晶体管,采用 SOT-23 小型表面贴装封装,适用于各类小功率开关与低噪声放大电路。器件在低电流放大与中高频响应上表现良好,是替换传统 2N3904 的常用 SMD 选型。

二、主要参数

  • 晶体管类型:NPN(小信号双极晶体管)
  • 直流电流增益 hFE:100 @ Ic=10mA, Vce=1V
  • 集电极电流 Ic(max):200mA
  • 集电极—发射极击穿电压 Vceo:40V
  • 耗散功率 Pd:250mW(封装与散热条件相关)
  • 特征频率 fT:300MHz
  • 集电极截止电流 Icbo:50nA
  • 发射极—基极击穿电压 Vebo:6V
  • 饱和电压 VCE(sat):典型 300mV
  • 工作结温范围:-55℃ ~ +150℃(Tj)
  • 封装:SOT-23
  • 品牌:JSMSEMI(杰盛微)

三、关键特性

  • 中等电压能力(Vceo=40V),适合 5V~24V 系统的低侧开关与放大用途。
  • 高频性能良好(fT≈300MHz),在 VHF 频段内可用于小信号放大和射频前端的某些低功率应用。
  • 低漏电流(Icbo≈50nA),在高阻抗电路中能够保持低偏置误差。
  • SOT-23 封装便于自动化贴装与高密度 PCB 设计。

四、典型应用场景

  • 数字电路中的低侧开关、驱动小型继电器或指示 LED(在安全电流范围内)。
  • 前置放大器与信号放大(音频、传感器信号)。
  • 电平转换、缓冲、低功耗开关与脉冲驱动电路。
  • 高频小信号放大或混合信号电路中的增益级。

五、封装与热管理

SOT-23 为塑封小体积封装,热阻较大。建议在 PCB 设计上:

  • 增加焊盘面积极大化散热;必要时追加铜箔散热通道。
  • 在连续工作或高占空比条件下,确保集电极电流与功耗不超过 Pd(250mW)。在高温环境下,应降低允许的耗散功率以保护结温。

六、设计与使用注意事项

  • 为避免击穿,实际电路中 Vce 不应超过 40V,且注意瞬态峰值。
  • 基极—发射极反向电压不可超过 Vebo(6V),否则可能损坏基区结。
  • 在要求饱和开关时,应提供足够的基极驱动电流;通常经验值 Ib ≈ Ic/10 可作为起始参考,以保证较低的 VCE(sat)。
  • 考虑到 hFE 在不同 Ic、Vce 与温度下变化,精确放大倍数应通过电路仿真与实测校准。

七、测试与替换建议

  • 量产采购或电路替换时,可用常规参数(hFE、Vceo、Ic)做初步筛选,但建议依据电路实际工作点做样品测试验证增益、饱和电压与温漂性能。
  • 对应 2N3904 类器件的 SMD 替代选型时,注意封装热性能与最大耗散功率的差异,必要时选用更大功率封装以保证可靠性。

本器件以其小体积、良好频率响应与通用性,适合各种中低功率、小信号应用场景。设计中请根据上列限制与建议合理选择偏置与散热措施,以保证长期稳定运行。

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