WMSIC Electronic Components

JSMSEMI PMEG2005AEA,115-JSM PMEG2005AEA

ModelPMEG2005AEA,115-JSM
PackageSOD-323
BrandJSMSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
JSMSEMI PMEG2005AEA, 115-JSM
Type
JSMSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
JSMSEMI
Electronic Component
PMEG2005AEA,115-JSM
Electronic Component
1
Package
SOD-323
Electronic Component
Schottky Diode
Electronic Component
0.027g
Electronic Component
1
Electronic Component
BM0263473652
Current
2A
Diode
1
Current(Ir)
50uA
(Vf)
410mV@1A;500mV@2A
Electronic Component
40℃~+125℃
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

PMEG2005AEA,115-JSM 产品概述

一、产品简介

PMEG2005AEA,115-JSM 是杰盛微(JSMSEMI)推出的一款单只独立二极管,采用紧凑的 SOD-323 表面贴装封装,面向中低功率整流与保护场景。器件在常温下具有较低的正向压降和较小的反向漏电,工作结温范围宽(-40℃ 至 +125℃),适合空间受限且要求可靠性的消费电子与通信设备。

二、关键电性能(典型与保证值)

  • 正向压降(Vf)
    • 典型:≈ 410 mV @ 1 A
    • 2 A 条件:典型约 500 mV,规格书中保守保证值可达 550 mV(请以最终数据表为准)
  • 直流反向耐压(Vr):40 V
  • 连续整流电流:2 A
  • 反向电流(Ir):约 50 μA(常温、最大 Vr 条件下)
  • 非重复峰值浪涌电流(Ifsm):9 A(短脉冲等级,用于一次性浪涌)
  • 工作结温:-40 ℃ ~ +125 ℃

这些参数表明该器件在 1 A 至 2 A 范围内具有良好的导通效率,适合作整流与反向保护使用;反向漏电随温度上升会增加,设计时需考虑温度对漏电的影响。

三、封装与热管理

SOD-323 小型封装利于高密度 PCB 布局,但散热能力受限。建议在电流接近规格(2 A)或在高环境温度时:

  • 在二极管脚对应的铜箔区域增加散热铜箔面积与过孔;
  • 采用短走线以减小串联电阻与寄生电感;
  • 进行热仿真与实际热测,必要时对器件进行电流降额(derating)。

焊盘与回流工艺按 SOD-323 推荐样式布置可保证良好焊接可靠性与热传导。

四、典型应用场景

  • 开关电源输出整流(低电流轨)
  • 充电器与适配器中的次级整流
  • 电池组的反向保护与防错接保护
  • LED 驱动与车载低功率负载保护(在符合电气与热规范条件下)
  • 便携式设备、通信终端、消费电子的保护与整流元件

五、选型与使用注意事项

  • 若系统对正向压降极为敏感(例如需最大化效率的小功率 DC‑DC),请以器件在 2 A 条件下的最大 Vf(550 mV)作为设计基准;必要时考虑更低 Vf 的器件或并联方案(并联需注意电流均流)。
  • 反向漏电在升温时会显著上升,应在高温工况评估漏电对待机耗电与可靠性的影响。
  • Ifsm 为短时浪涌能力,不可作为长期过载判据;遇常态突发大电流,应采用更大浪涌能力器件或添加限流保护。
  • 实际设计时务必参考厂方完整数据表以获取精确的测试条件与额定值。

六、典型电路建议与结语

  • 作为整流:二极管置于输出回路,配合合适的滤波电容与纹波管理;
  • 作为反向保护:将二极管放在电源正极串联方向或采取肖特基并联方案以降低压降损耗。

PMEG2005AEA,115-JSM 以其低 Vf、2 A 连续能力与小型 SOD-323 封装,适合在空间受限且对效率与成本有平衡要求的应用中使用。选型时请以芯片厂完整数据表与应用说明为准,并在目标工况下进行热与电测试验证。若需器件完整数据表或封装推荐焊盘图,可进一步提供,我可协助查阅并给出更具体的布板与应用建议。

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