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JSMSEMI AO4406A
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- JSMSEMI AO4406A
- Type
- SOP-8
- Minimum package
- 3000
Technical parameters
- Electronic Component
- JSMSEMI
- Electronic Component
- AO4406A
- Electronic Component
- 1
- Package
- SOP-8
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.17g
- Electronic Component
- 1
- Electronic Component
- BM0230664899
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 3W
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 2.47nF
- Gate (Qg)
- 20.8nC@15V
- Resistor(RDS(on))
- 14mΩ@4.5V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AO4406A 产品概述
一、简介
AO4406A 是一款适用于低压功率开关与配电的 N 沟道 MOSFET，额定漏源电压为 30V，连续漏极电流可达 15A。该器件在低驱动电压下具备较低的导通电阻，结合适中的栅极电荷与寄生电容，使其在开关与导通性能之间取得良好折衷，适合消费电子、电源管理与电机驱动等多种场景。
二、主要电气参数
- 漏源电压 Vdss：30V
- 连续漏极电流 Id：15A
- 导通电阻 RDS(on)：14mΩ @ Vgs=4.5V, Id=11A
- 最大耗散功率 Pd：3W
- 栅阈电压 Vgs(th)：1.9V（典型）
- 栅极电荷 Qg：20.8nC @ 15V
- 输入电容 Ciss：2.47nF @ 15V
- 反向传输电容 Crss：185pF @ 15V
- 工作温度范围：-55℃ ~ +150℃
三、特性与优势
- 低 RDS(on)：在 4.5V 驱动电压下 RDS(on) 仅 14mΩ，有利于减小导通损耗，适合低压高电流应用。
- 合理的栅极电荷与电容：Qg=20.8nC 与 Ciss=2.47nF 带来适中的开关速度，便于驱动器设计同时兼顾开关损耗与 EMI。
- 宽工作温度：-55℃ 至 +150℃，能够满足较苛刻的环境工况。
四、封装与热管理
封装为 SOP-8，布局紧凑，适合表面贴装工艺。需注意封装与 PCB 的散热能力受限，额定耗散功率为 3W。在高功率或高环境温度下，应通过铺铜、热过孔或散热片来提高热能力，并按安全裕度对电流进行降额。
五、典型应用场景
- DC-DC 升降压转换器的同步整流或开关管
- 电源管理中的负载开关与保护电路
- 便携设备与电池管理系统（适用于 12V/24V 低压域）
- 小功率电机驱动、电源分配模块
六、选型建议与使用要点
- 驱动电压：若需进一步降低导通损耗，建议尽量接近 4.5V 或更高的门极驱动，但要兼顾驱动器能力与开关损耗。
- 布局：栅极驱动回路应尽量短、粗，降低寄生电感；源-漏回路使用大面积铜箔以降低热阻与电阻。
- 热设计：在高频或大电流应用中，按实际散热条件评估 Pd，并考虑降额运行。
- 保护：使用合适的栅极电阻与 TVS/二极管等抑制浪涌与反向尖峰，延长器件寿命。
小结：AO4406A 在 30V/15A 的等级下提供了低 RDS(on) 与合理的开关特性，适合多种低压功率管理应用。正确的驱动与热设计能充分发挥其性能并提升可靠性。
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