WMSIC Electronic Components

JSMSEMI BT139-800E BT139

ModelBT139-800E
PackageTO-220
BrandJSMSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
JSMSEMI BT139-800E
Type
JSMSEMI
Minimum package
50

Technical parameters

Electronic Component
JSMSEMI
Electronic Component
BT139-800E
Electronic Component
1
Package
TO-220
Electronic Component
Thyristor (SCR) / Module
Electronic Component
2.84g
Electronic Component
1
Electronic Component
BM0257658605
Operating Temperature
40℃~+125℃
Surge Current
155A@20ms
Thyristor Type
1 Thyristor
Latching Current(Ih)
45mA
Current(It)
16A
Electronic Component
50
Voltage(Vtm)
1.6V
Gate Voltage(Vgt)
1.5V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BT139-800E 产品概述

一、主要特性

BT139-800E 是一颗双向晶闸管(双向可控硅,常用于交流开关控制),由 JSMSEMI(杰盛微)推出,采用 TO-220 封装,便于安装散热与工业化应用。器件适用于中等功率交流负载控制,具有较高的耐压能力和良好的浪涌承受能力,适合灯光调光、温控、电机软启动与家用电器等场景。

主要特性摘要:

  • 双向可控硅(Triac),适合交流路径双向导通
  • 断态峰值电压 Vdrm = 800 V,适用于高压交流或需较高隔离的场合
  • 通态峰值电压 Vtm ≈ 1.6 V(导通压降),典型导通特性稳定
  • 额定通态电流 It = 16 A(连续),短时浪涌能力 155 A(20 ms)
  • 门极触发:Vgt = 1.5 V,Igt = 10 mA,门极保持电流 Ih = 45 mA
  • 门极平均耗散功率 PG(AV) = 500 mW
  • 工作温度范围:-40 ℃ ~ +125 ℃

二、主要参数说明(对设计的影响)

  • Vdrm = 800 V:表示器件在关断状态下可承受的峰值反向或正向电压,上限高,适合较高电压及瞬态环境,但在实际电路中仍需考虑浪涌抑制与电压裕量。
  • It = 16 A 与 Vtm = 1.6 V:在额定电流下会有约 1.6 V 的压降,功耗约为 P = Vtm × I(例如在 10 A 时约 16 W),因此热管理非常重要。
  • 浪涌电流 155 A@20ms:对启动瞬态或短路突发有较好承受能力,但不能作为长期运行参数。
  • 门极参数(Vgt、Igt、Ih、PG(AV)):触发门极需要足够的电流/电压,通常设计驱动时需确保门极驱动能提供 ≥ Igt,并且电路需考虑保持电流 Ih(若负载电流低于 Ih,器件可能恢复到关断态)。

三、典型应用场景

  • 家用电器(电热器、烘干机、烤箱等)的功率控制与温度调节
  • 灯光调光器(相位控制)与舞台灯光调节
  • 小功率交流马达的调速与软启动(配合适当的保护电路)
  • 电源切换、交流负载开关控制与保护电路(需配合过压/过流保护)
  • 工业控制中对交流负载进行定时或调节的场合

四、设计注意事项与热管理

  • 散热:在中等或较高负载下器件功耗显著(P ≈ Vtm × Iavg),TO-220 需配合合适散热片或机壳散热。注意焊接和安装螺栓的绝缘/导热要求,必要时使用绝缘垫片与绝缘螺柱。
  • 驱动与触发:门极驱动应能提供不小于 Igt 的触发电流,且驱动脉冲持续时间要足够保证可靠触发;为保护门极,常在门极与 MT1 之间并联小电阻或串联限流电阻,避免门极瞬间过流。
  • dV/dt 与误触发:双向晶闸管对电压上升速率敏感,快速上升的瞬态可能导致误触发。对感性或高干扰负载建议采用 RC 抑制网络(snubber)、TVS 或 MOV 抑制瞬态。
  • 过流与保护:虽然器件有短时浪涌能力,但长期过流会损坏。设计中应加入熔断器、限流电阻或电子过流检测与断开措施。
  • 工作点与保持电流:在设计相位调光或低功率控制时,确保负载电流在导通后高于 Ih(45 mA),否则可能出现不稳定导通或复位。

五、应用建议与替代方案

  • 若目标为高效直流控制或需双向精确控制(如在高频 PWM 下),可考虑使用 MOSFET 或 IGBT;但在交流相位控制、成本与电路简单性优先时,BT139-800E 更为合适。
  • 在涉及工业级高可靠或更高电流/更低导通压降的应用,可选更大封装/更高规格的 Triac 或配合 SSR(固态继电器)实现隔离与更简洁的控制接口。
  • 选型时综合考虑环境温度、散热条件、最大工作电流与浪涌水平,并在 PCB 布局上尽量缩短高电流回路与门极驱动线,采用良好接地和防护设计。

总结:BT139-800E 以其 800 V 的耐压能力、16 A 的额定电流和较强的短时浪涌承受力,适用于多类交流功率控制场合。设计时应重视门极驱动、dV/dt 抑制与热管理,以保证长期稳定可靠运行。

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