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JJW JMTQ35N06A
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- JJW JMTQ35N06A
- Type
- JJW
- Minimum package
- 5000
Technical parameters
- Electronic Component
- JJW
- Electronic Component
- JMTQ35N06A
- Electronic Component
- 1
- Package
- PDFN3.3x3.3-8L
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.117g
- Electronic Component
- 1
- Electronic Component
- BM0228789448
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 41W
- Electronic Component
- 5000
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 2.9nF
- Gate (Qg)
- 50nC@10V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
JMTQ35N06A产品概述
一、产品概述
JMTQ35N06A为JJW（捷捷微）推出的一款高性能N沟道功率MOSFET，额定漏源电压60V，连续漏极电流35A，典型导通电阻仅18mΩ（VGS=10V）。器件耐温范围宽（-55℃~+150℃），适用于要求可靠性与效率并重的中功率开关场合。
二、主要规格
- 类型：N沟道MOSFET
- 漏源电压（Vdss）：60V
- 连续漏极电流（Id）：35A（散热条件依赖）
- 导通电阻（RDS(on)）：18mΩ @ VGS=10V
- 阈值电压（VGS(th)）：2.5V @ 250µA
- 总栅极电荷（Qg）：50nC @ 10V
- 耗散功率（Pd）：41W（以良好散热为前提）
- 输入电容（Ciss）：2.9nF @25V
- 反向传输电容（Crss）：124pF @25V
- 封装：PDFN3.3x3.3-8L
- 工作温度：-55℃ ~ +150℃
- 数量：1个N沟道
三、主要特性与优势
- 低导通电阻带来较低的导通损耗，适合要求高效率的电源和电机驱动。
- 中等栅极电荷（50nC）在保证开关速度的同时便于驱动器设计，适用于中低频开关应用。
- 宽温度范围和较高的功耗处理能力适配工业级应用。
- PDFN3.3x3.3-8L封装兼顾尺寸与散热性能，便于PCB布局和自动贴装。
四、典型应用
- 同步整流与降压/升压DC-DC转换器
- 电机驱动和功率开关模块
- 电池管理与电源分配开关（P-channel替代场景）
- 开关电源、逆变器与LED驱动等中功率场合
五、封装与散热建议
PDFN3.3x3.3-8L为小型表贴封装，建议在PCB底部设计热源垫并增加过孔连接至散热层或铜箔以提升散热能力。Pd 41W为理论值，实际可承受电流与损耗需依据PCB散热、环境温度及结-壳温升计算确定。
六、使用建议与注意事项
- 驱动：为达到标称RDS(on)应采用接近10V的栅极驱动电压；若驱动电压低于10V，导通电阻会上升。
- 开关设计：Ciss与Qg较大时在高频下会增加驱动损耗，建议评估开关频率并选配合适驱动器、电阻和死区控制。
- 浪涌与反向保护：对感性负载应增加TVS、箝位或RC缓冲以防止过压和摩擦耗散。
- 热设计：在高电流工作条件下请验证结温不超过器件额定值，必要时采用铜厚更大的散热层或外置散热器。
- 测试：参考完整数据手册进行SOA、热阻和可靠性评估，注意VGS最大额定值与绝对最大额定参数。
七、总结
JMTQ35N06A以其60V耐压、低RDS(on)与较高电流能力，适合多种中功率开关电源与驱动场景。合理的栅极驱动与散热设计将充分发挥其低损耗与高效率优势，是工业与消费类电源设计的实用选择。若需进一步设计参数与波形特性，请参考JJW完整数据手册。
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