Model & package intelligence
Model text, package form, tray or reel details, and visual evidence are reviewed together before RFQ feedback.
KUU WPM2341-3/TR
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- KUU WPM2341-3/TR
- Type
- KUU
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- KUU
- Electronic Component
- WPM2341-3/TR
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM0264342988
- Power Dissipation(Pd)
- 1.4W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
- Capacitor(Ciss)
- 633pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
WPM2341-3/TR 产品概述
一、产品概述
WPM2341-3/TR 是一款基于 TrenchFET 工艺的 P 沟道功率 MOSFET，采用 SOT-23 封装并提供卷带（Tape & Reel）包装。器件针对便携式设备和电源管理应用优化，具有超低导通电阻和较低栅极电荷，适用于高侧负载开关与 DC/DC 转换器中的快速保护与切换场合。
二、主要参数
- 数量：1 个 P 沟道
- 漏源耐压 Vdss：20 V
- 连续漏极电流 Id：3.7 A
- 导通电阻 RDS(on)：135 mΩ（VGS = -2.5 V）
- 功耗 Pd：1.4 W（SOT-23 封装）
- 门限电压 |VGS(th)|：1.2 V（P 沟道器件，门限为负值）
- 栅极电荷 Qg：8 nC（标称，0 V 起测）
- 输入电容 Ciss：633 pF
- 输出电容 Coss：145 pF
- 反向传输电容 Crss：110 pF
三、主要特性与优势
- TrenchFET 架构带来低 RDS(on)，降低导通损耗，提升系统效率。
- 适配低电压门驱动（典型 VGS 工作范围），便于直接与 MCU 或 PMIC 驱动接口。
- 小封装（SOT-23）适合空间受限的移动设备与便携式终端。
- 卷带包装利于自动化贴片生产。
四、典型应用场景
- 便携式设备的负载开关与电源选择（高侧开关）
- 电池供电系统的断开/反接保护
- DC/DC 转换器中的同步整流或旁路开关
- 电源管理模块与电源路径控制
五、设计注意事项与热管理
- 虽然器件额定连续电流为 3.7 A，但 SOT-23 Pd = 1.4 W，会受 PCB 铜层和环境温度限制。按 RDS(on) 估算：1 A 时导通损耗约 0.135 W，2 A 时约 0.54 W，3.7 A 时约 1.85 W（超过封装额定 Pd）。实际设计应按 PCB 散热能力和占空比限制平均电流。
- 较大的 Ciss（633 pF）和 Qg（8 nC）表示在高频开关时需关注栅极驱动能量和开关损耗，建议使用短而粗的栅极走线并采用合适的驱动器以降低开关延时。
- 布局建议：尽量缩短漏源回路，增大散热铜箔，靠近器件放置旁路电容与驱动元件，减少寄生电感/电阻。
六、封装与采购信息
- 品牌：KUU
- 封装：SOT-23（适合自动化贴片）
- 包装：卷带（/TR 型号适合贴片生产）
- 典型用途：便携设备负载开关、DC/DC 转换器、电源管理模块
总结：WPM2341-3/TR 在 20 V 等级的 P 沟道 MOSFET 中提供了较低的导通电阻与紧凑封装，非常适合便携式电源路径控制与高侧开关设计，但在高电流持续工作时需综合考虑封装热阻与 PCB 散热条件以确保可靠性。
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