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KUU SMAJ33A
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- KUU SMAJ33A
- Type
- KUU
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- KUU
- Electronic Component
- SMAJ33A
- Electronic Component
- 1
- Package
- DO-214AC
- Electronic Component
- Electronic Component
- Type
- TVS
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.11g
- Electronic Component
- 1
- Electronic Component
- BM0264548722
- Operating Temperature
- 55℃~+150℃
- Voltage
- 58.1V
- Current(Ir)
- 1uA
- Voltage(VBR)
- 40V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SMAJ33A 产品概述
一、产品简介
SMAJ33A 是 KUU 品牌的一款单向（单极性）瞬态电压抑制二极管（TVS），采用 DO-214AC（SMA）塑料封装，内部为玻璃钝化芯片结结构。器件专为抑制浪涌和瞬态过压设计，能在汽车、通信、电源以及工业电子系统中提供可靠的过压保护。
二、主要参数
- 类型：TVS（瞬态抑制二极管），单向
- 反向截止电压 Vrwm：33 V
- 击穿电压 VBR：40 V
- 钳位电压（典型）：58.1 V
- 峰值脉冲电流 Ipp（10/1000µs）：6.9 A
- 峰值脉冲功率 Ppp（10/1000µs）：400 W
- 反向漏电流 Ir：1 µA（典型，在13 V 以上小于1 µA）
- 工作温度范围：-55 ℃ ~ +150 ℃
- 封装：DO-214AC（SMA）
- 焊接耐受性：265 ℃ / 10 s（保证高温焊接）
三、主要特性
- 出色的钳位能力：在10/1000µs冲击波形下可承受400W峰值脉冲功率，并将被保护电路钳制在典型58.1V范围内。
- 低齐纳阻抗：在浪涌工作点下提供低阻抗路径，减小沿线电压尖峰对后级器件的影响。
- 极低反向漏电：典型反向电流在13V以上小于1µA，适合对漏电敏感的系统。
- 快速响应：制造商给出从0V到最小击穿电压通常小于1.0ps的响应时间（典型）。
- 鲁棒封装与工艺：SMA 塑料封装配合玻璃钝化芯片结，提高长期可靠性，并支持265 ℃/10 s 的高温回流焊工艺。
四、典型应用场景
- 电源输入端的浪涌保护与稳压电路保护
- 通信设备的线路过压/雷击抑制
- 汽车电子中的瞬态浪涌保护（需参照系统峰值电压与钳位要求）
- 工业控制、测控与仪表中的输入保护和接口防护
五、封装与可靠性说明
SMA（DO-214AC）封装便于自动贴装和波峰/回流焊接，适合常规表面贴装工艺；玻璃钝化工艺增强结面稳定性，降低长期漏电和老化风险。器件工作温度范围宽，-55 ℃ 至 +150 ℃，可满足工业级与部分汽车级环境要求。制造商保证265 ℃/10 s 的焊接耐受能力，利于标准生产流程。
六、选型与使用注意事项
- 钳位电压与系统承受能力匹配：典型钳位58.1V，应确认被保护元件在此电压下不受损。
- 冲击波形与能量评估：400W/10/1000µs 为典型脉冲能力，如遇更长或更强脉冲需做能量预算或并联/并用更高功率器件。
- 漏电与待机功耗：对低漏电有要求的应用请参考实际工作电压下的 Ir 参数并进行实测验证。
- 热管理：尽管为瞬态器件，连续或重复冲击会产生热量，需考虑PCB散热与器件间距。
- 极性确认：为单向器件，接线错误可能导致失效或失去保护功能。
SMAJ33A 以其高峰值脉冲能力、低漏电与可靠封装，适合用于需要稳健瞬态抑制的各类电子系统。在最终设计中建议参照完整数据手册进行仿真与实验验证。
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