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KUU ESD05V32D-LC
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- KUU ESD05V32D-LC
- Type
- KUU
- Minimum package
- 3000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- KUU
- Electronic Component
- ESD05V32D-LC
- Electronic Component
- 1
- Package
- SOD-323
- Electronic Component
- Electronic Component
- Type
- ESD
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.026g
- Electronic Component
- 1
- Cj- Capacitor
- 0.8pF
- Electronic Component
- BM0264873492
- Operating Temperature
- 55℃~+150℃
- Voltage
- 20V
- Electronic Component
- IEC 61000-4-2；IEC 61000-4-4
- Current(Ir)
- 1uA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
ESD05V32D-LC 产品概述
一、产品简介
ESD05V32D-LC 是 KUU 品牌的一款双向瞬态电压抑制（ESD）二极管，专为低压高速信号线和敏感电子接口提供静电放电与浪涌保护。器件反向截止电压（Vrwm）为 5V，击穿电压（VBR）最小 6V，典型钳位电压不高于 20V。峰值脉冲电流 Ipp（8/20 μs）为 18A，峰值脉冲功率 Ppp 为 350W，具有低漏电流和低结电容（Cj = 0.8 pF），封装为 SOD-323，工作温度范围 -55℃ 到 +150℃，符合 IEC 61000-4-2 与 IEC 61000-4-4 防护要求。
二、主要特性
- 双向保护，适用于正负两向瞬态脉冲
- 反向截止电压 Vrwm = 5V，击穿电压 VBR ≥ 6V
- 峰值脉冲电流 Ipp（8/20 μs）= 18A，Ppp = 350W
- 最大钳位电压 ≤ 20V（在规定脉冲条件下）
- 静态漏电流 Ir ≈ 1 μA，低功耗影响
- 结电容 0.8 pF，适合高速信号线应用
- 紧凑 SOD-323 封装，便于表面贴装组装
三、典型应用
- 手机、平板与便携设备的数据与充电接口保护（USB、LDO 输入等）
- 高速接口与信号线（USB 2.0/3.0 降级保护、HDMI、LVDS）
- 工业控制、通信设备、物联网模块的接口和外部引脚保护
- 消费电子、汽车信息娱乐系统的局部浪涌与静电防护
四、电气参数说明
- Vrwm：在正常工作环境下最大允许的反向电压（5V），不能长期超过此值
- VBR：器件开始导通的击穿电压（≥6V）
- Ipp / Ppp：用标准 8/20 μs 波形测试的脉冲承受能力（18A / 350W）
- 钳位电压：在脉冲作用下将瞬态电压限制到安全值（最大 20V）
- Cj：结电容小（0.8 pF），保证高速信号完整性
五、封装与可靠性
SOD-323 小型封装利于占板面积最小化并减小寄生电感。器件适应宽温区（-55℃~+150℃），通过 IEC 61000-4-2（静电放电）和 IEC 61000-4-4（脉冲群）等电磁兼容测试，可靠性适合消费类与工业级应用。
六、使用建议与注意事项
- 布局建议：器件尽量靠近受保护的连接器/引脚放置，走线短且宽，设置良好接地回流路径与多颗接地孔。
- 不作为稳压器或持续限流器使用，避免在 Vrwm 以上长时间施加电压。
- 在选型时根据最大钳位电压与系统耐受电压匹配，确保在 Ipp 条件下不会对后级造成损伤。
- 参考厂商推荐的回流焊工艺参数以保证焊接可靠性。
如需器件型号表、典型波形图或封装尺寸图，可提供进一步资料以便设计验证与布局优化。
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