WMSIC Electronic Components

KUU KRU30L30M3

ModelKRU30L30M3
PackagePDFN-8L(3x3)
BrandKUU
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
KUU KRU30L30M3
Type
KUU
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
KUU
Electronic Component
KRU30L30M3
Electronic Component
1
Package
PDFN-8L(3x3)
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.08g
Electronic Component
1
Electronic Component
BM0264342993
Power Dissipation(Pd)
35W
Electronic Component
Electronic Component
Electronic Component
5000
Voltage(Vdss)
30V
Capacitor(Ciss)
2.15nF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

KRU30L30M3 产品概述

一、主要参数

KRU30L30M3 为 KUU 品牌 P 沟道功率 MOSFET,主要电气参数如下:额定漏源电压 Vdss = 30V;连续漏极电流 Id = 35A;导通电阻 RDS(on) = 10.5 mΩ(@ Vgs = 20V);耗散功率 Pd = 35W;栅阈电压 Vgs(th) ≈ 2.8V;总栅极电荷 Qg = 40.3 nC(@10V);输入电容 Ciss = 2.15 nF,反向传输电容 Crss = 245 pF。封装为 PDFN-8L (3×3)。

二、器件特性与优势

  • 低导通电阻与高电流承载能力(10.5 mΩ / 35A)适合高效率电源路径需求。
  • 30V 额定电压覆盖常见 12V 与 24V 系统的高侧开关与保护场景。
  • PDFN-8L 小型封装兼顾面积与热性能,便于高密度 PCB 布局。

三、驱动与开关考量

  • 栅极电荷 Qg 较大(40.3 nC@10V),要求驱动器具备足够驱动电流以实现快速切换,长栅驱动时间会增加开关损耗。
  • 标称 RDS(on) 在 Vgs=20V 时测得;实际设计中若驱动电压受限(例如仅 -10V),导通电阻会增加,应在电路仿真或样品测量中验证。

四、热管理与封装建议

  • Pd = 35W 表明在高功耗条件下需良好散热:推荐使用较大散热铜箔、底部过孔或外部散热片以降低结到环境热阻。
  • PDFN-8L (3×3) 要注意焊盘设计与热焊盘的焊锡填充,保证热流向 PCB 内层散布。

五、典型应用场景

  • 高侧开关与电源路径控制(汽车电子、工业电源、笔记本/便携设备)
  • 反向连接保护、负载断开以及同步整流场景
  • 电池管理与充放电切换(适用于 12V/24V 电池系统)

六、设计注意事项

  • 对于高频切换,请权衡导通损耗与开关损耗,必要时采用驱动缓冲或阻尼网络以抑制振铃。
  • 若用于高侧开关,确认系统可提供足够的门极驱动幅值(P 沟道栅压通常为负向相对于源极),并留出安全裕量以避免误导通。
  • 在布局上尽量缩短漏源回流路径、加大散热铜面积并安排热过孔以提升可靠性。

结论:KRU30L30M3 以其低 RDS(on)、高电流能力与紧凑封装,适合 12V/24V 电源管理与高侧开关应用,但因较高栅极电荷与对驱动电压的敏感性,在高速或受限驱动电压条件下需做好驱动与热设计验证。

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