WMSIC Electronic Components

KUU BSS123

ModelBSS123
PackageSOT-23
BrandKUU
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
KUU BSS123
Type
KUU
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
KUU
Electronic Component
BSS123
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.034g
Electronic Component
1
Electronic Component
BM0264389270
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
250mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
100V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BSS123 产品概述

一、概述

BSS123(品牌:KUU)是一款单只 N 沟道功率 MOSFET,封装为 SOT-23,面向小信号开关与高压低电流场合。器件关键参数:漏源耐压 Vdss = 100V,连续漏极电流 Id = 150mA,典型导通电阻 RDS(on) = 6Ω(VGS=10V),耗散功率 Pd = 250mW,门阈电压 VGS(th) ≈ 2.8V,输入电容 Ciss ≈ 40pF,工作温度范围 -55℃ ~ +150℃。

二、主要特性

  • 高耐压设计:100V 漏源耐压,适合较高压差的小电流开关。
  • 小封装:SOT-23,有利于密集布板和自动贴装。
  • 低输入电容(40pF):开关速度快,驱动功耗低,适合高频切换场合。
  • 低功率耗散(Pd=250mW):适用于低功率、间歇或低占空比工作。

三、典型应用

  • 高压小电流开关、继电器/继电器驱动的辅助开关。
  • 便携仪器中的电源切换与反向保护。
  • 信号级别电平移位、模拟/数字开关。
  • 高阻抗传感前端的保护与隔离。

四、使用建议与注意事项

  • 门极驱动:由于 VGS(th)≈2.8V,器件在 3.3V 门极驱动下导通有限,若需较低的 RDS(on) 建议使用 10V 门极驱动;实际导通情况请通过静态、动态测试确认。
  • 功率与热管理:在满载 150mA 且 RDS(on)=6Ω 时,导通损耗约 I^2·R ≈ 0.15^2×6 ≈ 135mW,低于 Pd=250mW,但须考虑封装热阻与环境温度,建议留有裕度并做温度仿真与实测。
  • 开关保护:驱动感性负载时为避免尖峰电压,须并联续流二极管或 RC 吸收网络。
  • ESD 与静电敏感:作为 MOSFET,应采取静电防护措施(正确上电顺序、门极限流电阻、包装防静电)。
  • 电气极限:详细的 VGS(max)、脉冲规格、SOA 等请参考完整规格书,避免超过器件极限。

五、封装与引脚(典型)

  • 封装:SOT-23(表面贴装)。
  • 常见引脚排列:Pin1 = Gate (G)、Pin2 = Drain (D)、Pin3 = Source (S)。(具体引脚排列请以样片或厂方数据手册为准)

六、选型提示与替代

  • 若电流或损耗需求提升,优先选择 RDS(on) 更低且 Pd 更大的封装(如 SOT-223、SOP)。
  • 若需在 3.3V/1.8V 逻辑电平下高效导通,应选专门的 logic-level MOSFET(低 VGS(th)、低 RDS(on) 标注)。

总结:BSS123(KUU,SOT-23)以其 100V 耐压、低输入电容和小体积特点,适合高压低电流、快速开关的场景。设计时应关注门极驱动电压、热耗散与开关瞬态防护,必要时参照完整数据手册进行验证。

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