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KUU 4953
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- KUU 4953
- Type
- KUU
- Minimum package
- 4000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- KUU
- Electronic Component
- 4953
- Electronic Component
- 1
- Package
- SOP-8
- Electronic Component
- 2 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.168g
- Electronic Component
- 1
- Electronic Component
- BM0258756613
- Power Dissipation(Pd)
- 2W
- Electronic Component
- Electronic Component
- Electronic Component
- 4000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 528pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
4953 产品概述
一、产品简介
KUU 4953 是一款封装为 SOP-8 的双通道 P 沟道场效应管，集成两个 P 沟道 MOSFET，适用于中低电压高侧开关和电源管理场合。器件的设计兼顾导通性能与开关特性，适合空间受限但需可靠开关控制的应用。
二、主要参数
- 数量：2 个 P 沟道
- 漏源电压 Vdss：30 V
- 连续漏极电流 Id：5.3 A（单管）
- 导通电阻 RDS(on)：89 mΩ @ Vgs = 4.5 V
- 耗散功率 Pd：2 W（SOP-8 封装，环境条件有关）
- 阈值电压 Vgs(th)：3 V @ 250 µA
- 总栅极电荷 Qg：9 nC @ 5 V
- 输入电容 Ciss：528 pF；反向传输电容 Crss：70 pF；输出电容 Coss：132 pF
三、特性与优势
- 低至 89 mΩ 的导通电阻在 4.5 V 驱动下提供较低的导通损耗，适合需要较高效率的开关场合。
- 栅极电荷 Qg 为 9 nC，驱动能量适中，有利于在驱动器负载和开关速度之间取得平衡。
- 双通道集成在 SOP-8 封装中，有利于节省 PCB 面积并便于双通道对称或独立控制。
四、典型应用
- 电池供电设备的高侧与低侧开关（须按 P 沟道特性布置）
- 便携式电源管理、负载切换与反向电流保护
- DC-DC 转换器中的同步开关（需根据拓扑选择合适的驱动方式）
- 通信与消费电子的功率开关场景
五、封装与热管理
SOP-8 封装限制了器件的散热能力，标称 Pd = 2 W 在良好 PCB 散热条件下可达到。实际使用中应采用较大铜箔散热、靠近地平面或加热沉块，并注意器件的结温上限，避免长期在高电流高功耗下工作。
六、使用建议与注意事项
- P 沟道 MOSFET 的 Vgs 为相对源极的电压，驱动时需确保合适的栅源电位（通常为负向偏压以导通高侧）。
- 由于 Vgs(th) 为 3 V（@250 µA），在接近阈值电压时器件可能处于线性区，应避免在此区域长期使用以减少热耗散。
- 开关频率较高时需关注 Qg 与 Crss 引起的驱动损耗与开关损耗，必要时在栅极串联阻抗或采用合适驱动器来优化上升/下降沿。
- 若并联使用以提高电流能力，应确保 RDS(on) 与热分布匹配并做好源引脚的等电位布局。
本器件适合对封装尺寸与双通道集成有要求的电源与开关设计，推荐在原理样机阶段结合实际 PCB 散热与驱动条件进行评估。
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