WMSIC Electronic Components

KUU WPM2015-3/TR

ModelWPM2015-3/TR
PackageSOT-23-3
BrandKUU
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
KUU WPM2015-3/TR
Type
KUU
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
KUU
Electronic Component
WPM2015-3/TR
Electronic Component
1
Package
SOT-23-3
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.031g
Electronic Component
1
Electronic Component
BM0225994554
Power Dissipation(Pd)
1.1W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V
Capacitor(Ciss)
534pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

WPM2015-3/TR 产品概述

概要

WPM2015-3/TR 是一款由 KUU 品牌生产的场效应管(MOSFET),属于P沟道类型,采用SOT-23-3封装。这种元器件设计用于各种电子设备中的开关和放大应用,特别适合需要高效能和小尺寸的系统。

基础参数

以下是 WPM2015-3/TR 的一些关键参数:

  • 功率(Pd): 1.1W
    • 这表明该MOSFET在正常工作条件下可以承受的最大功率。
  • 反向传输电容(Crss@Vds): 54pF @ 10V
    • 这是指在特定漏源电压下,MOSFET的反向传输电容,影响其高频性能。
  • 导通电阻(RDS(on)@Vgs, Id): 110mΩ @ 4.5V, 2.7A
    • 这表示当门源电压为4.5V,漏极电流为2.7A时,MOSFET的导通电阻,直接影响到能耗和热量产生。
  • 漏源电压(Vdss): 20V
    • 这是MOSFET可以承受的最大漏源电压,超过此值可能导致元器件损坏。
  • 类型: 1个P沟道
    • 表明这是一个P型场效应管,适用于不同类型的电路设计。
  • 输入电容(Ciss@Vds): 534pF @ 10V
    • 这是指在特定漏源电压下,MOSFET的输入电容,影响其驱动能力和开关速度。
  • 连续漏极电流(Id): 2.4A
    • 这是MOSFET可以持续承受的最大漏极电流,超过此值可能导致过热或损坏。
  • 阈值电压(Vgs(th)@Id): 1V @ 250uA
    • 这表示当漏极电流为250uA时,MOSFET开始导通所需的最低门源电压。

应用场景

WPM2015-3/TR 由于其小尺寸和高性能,适用于各种应用场景,包括但不限于:

  • 低功耗电子设备: 如便携式电子设备、无线传感器等,需要高效能和小尺寸的场效应管。
  • DC-DC转换器: 在开关模式电源供应中,WPM2015-3/TR 可以作为高频开关元件,提高效率和减小体积。
  • 电机驱动: 用于驱动小型DC电机或步进电机,提供高效能和可靠的开关性能。
  • 信号放大: 在一些信号处理应用中,WPM2015-3/TR 可以作为放大器或开关元件,提供快速响应和低噪声特性。

优势

  • 高效能: 低导通电阻(RDS(on))和小尺寸封装,使得WPM2015-3/TR 在高频应用中表现出色。
  • 小尺寸: 采用SOT-23-3封装,使其非常适合空间有限的设计。
  • 低阈值电压: 仅需1V的阈值电压,使得驱动变得更加容易和节能。
  • 高可靠性: 由知名品牌KUU生产,确保了产品的质量和可靠性。

使用注意事项

在使用WPM2015-3/TR 时,需要注意以下几点:

  • 热管理: 由于高频操作可能产生较大的热量,需要确保良好的散热设计。
  • 电压限制: 不要超过最大漏源电压(Vdss)和最大连续漏极电流(Id),以避免元器件损坏。
  • 驱动要求: 确保驱动电路能够提供足够的门源电压和电流,以确保MOSFET的正常工作。

通过以上信息,可以看到WPM2015-3/TR 是一款功能强大、体积小巧的P沟道MOSFET,广泛适用于各种需要高效能和小尺寸的电子系统。其优异的性能参数和可靠的质量,使其成为许多设计工程师的首选。

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