WMSIC Electronic Components

KUU KSI2343CDS-T1-GE3

ModelKSI2343CDS-T1-GE3
PackageSOT-23
BrandKUU
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
KUU KSI2343CDS-T1-GE3
Type
KUU
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
KUU
Electronic Component
KSI2343CDS-T1-GE3
Electronic Component
1
Package
SOT-23
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.031g
Electronic Component
1
Electronic Component
BM0257316648
Power Dissipation(Pd)
1.4W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
30V
Capacitor(Ciss)
520pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

KSI2343CDS-T1-GE3 — P沟道 MOSFET 产品概述

一、主要特性

KSI2343CDS-T1-GE3 为 KUU 品牌的 P 沟道场效应管,采用 SOT-23 小外形封装,面向空间受限的电源管理与高侧开关场合。器件在中低压环境下表现平衡,主要特性如下:

  • 漏源耐压 Vdss:30 V(适用于常见 12V/24V 较低电压系统)
  • 连续漏极电流 Id:4.1 A(额定值,实际热条件相关)
  • 导通电阻 RDS(on):110 mΩ @ |Vgs| = 4.5 V(P 型,Vgs = -4.5V)
  • 最大耗散功率 Pd:1.4 W(SOT-23 封装受限)
  • 典型阈值(幅值)|Vgs(th)| = 2 V @ 250 μA

二、关键电气参数

  • 栅极总电荷 Qg:9.2 nC @ 10 V(开关驱动需求中等,需考虑驱动器能力)
  • 输入电容 Ciss:520 pF
  • 反向传输电容 Crss(Cgd):65 pF
  • 输出电容 Coss:100 pF 封装与电容特性表明器件在开关速度与驱动能量之间有折衷,适合中速开关或作为高侧模拟/数字开关使用。

三、典型应用场景

  • 电池供电设备的高侧开关与负载切换
  • 便携式设备的电源路径管理、反向电流保护
  • 小功率 DC-DC 变换器中的开/关元件(非高频主开关)
  • 信号级电源选择、同步整流(配合电路设计)

四、布局与散热建议

SOT-23 封装的 Pd 与散热能力有限,实际可通过 PCB 布局提升:

  • 在器件底部和焊盘周围增加铜箔面积,必要时加大顶/底层散热铜厚
  • 对流通道进行多热连接或热过孔(via)到内层/底层铜箔
  • 减少走线长度与阻抗,尤其是源极与漏极的电流回流路径
  • 开关时加入合适的栅阻(10–200 Ω)以抑制振铃,必要时并联 RC 吸收或 TVS

五、使用注意与选型建议

  • 虽然标称 Id 为 4.1 A,但在 SOT-23 与典型 PCB 布局下长期大电流受限于热阻,设计时按热功率 Pd(1.4 W)和实际铜箔散热能力进行热仿真与裕量。
  • 阈值电压为约 2 V(幅值),意味着需要一定的负向栅压才能充分导通;在逻辑电平驱动时请确认驱动电压余量(注意 P 沟道 Vgs 为负值表示导通)。
  • Qg 与 Ciss 指出对驱动器有一定要求:若需高频切换,选择能快速供/吸电荷的驱动方案或限制开关频率。
  • 作为高侧开关时可省去升压驱动,但需合理选择门极上拉/下拉电阻以保证开/关可靠。

总结:KSI2343CDS-T1-GE3 在 30 V 等级的高侧开关与电源路径管理中提供了体积小、性能均衡的解决方案。选用时重点关注 PCB 散热与驱动能力,以发挥器件最佳性能。

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